United Microelectronics Corp.

Liang-Wei Chiu

Tsung-Hsun Wu

Sheng-Yuan Hsueh

Kuo-Hsing Lee

Kun-Hsien Lee

Chang-Chien Wong

Shih-Hao Liang

Pin Tsao

Yen-Yu Shen

A semiconductor device includes a first metal-oxide semiconductor (MOS) transistor on a first substrate, a first interlayer dielectric (ILD) layer on the first MOS transistor, a second substrate on the first ILD layer, and a second MOS transistor on a second substrate. Preferably, the semiconductor device includes a static random access memory (SRAM) and the SRAM includes a first pull-up device, a second pull-up device, a first pull-down device, a second pull-down device, a first pass-gate device, a second pass-gate device, a read port pull-down device, and a read port pass-gate device, in which the read port pull-down device includes the first MOS transistor and the read port pass-gate device includes the second MOS transistor.

Static random access memory (SRAM) and method for fabricating the same

A one-time programmable (OTP) memory device includes a first memory cell, which further includes a first source line extending along a first direction on a substrate, a first word line extending along the first direction on one side of the first source line, a second word line extending along the first direction on another side of the first source line, a first diffusion region extending along a second direction adjacent to two sides of the first word line and the second word line, and a first metal interconnection connecting the first word line and the second word line.

One-time programmable memory device

Growing community of inventors

Tainan, Taiwan

Liang-Wei Chiu