Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Petrochina Company Limited

Chinese Academy of Sciences

Ordos Yuansheng Optoelectronics Co., Ltd.

University of Science and Technology Beijing

Boe Mled Technology Co., Ltd.

Amazon Technologies, Inc.

Nokia Corporation

Beijing Boe Optoelectronics Technology Co., Ltd.

Vestas Wind Systems A/s

Beijing Jiaotong University

Beijing Huarong Tianchuang Superconduct Technology Development Co., Ltd.

O. Ya. Institute for Radiophysics and Electronics of National Academy of Sciences of Ukraine

Beijing Huaronttianchuang Superconduct Tech Dev Co

Liang Sun

Tuo Sun

Lintao Zhang

Ying Wang

Lujiang Huangfu

Zhanjie Ma

Yao Liu

Liangliang Li

Jinchao Bai

Xiaoyong Lu

Zheng Liu

Xinshe Yin

Jianming Li

Zhaohui Hao

Xiaodan Jin

Xiaodan Liu

Xiaoqi Wang

Xu Jin

Xibin Shao

Dong Li

Chunping Long

Xiaolong Li

Hong Li

Xu Wang

He H Liu

Guang Cheng Li

Jianfeng Yuan

Jia Wang

Seung Moo Rim

Zuqiang Wang

Xiaming Zhu

Yun Wu

Sheng Luo

Hang Jiao

Jiangming Huang

Mykola Cherpak

Valerii Skresanov

Oleksandr Barannyk

Volodymyr Glamazdin

Yusheng He

Minghua Xuan

Ming Wang

Jian Ma

Chao Liu

Hongwei Tian

Chang Liu

Yanan Niu

Shuai Zhang

Haitao Wu

Huijuan Zhang

Shoukun Wang

Xiangqian Ding

Dong Yan Yang

Weilin Lai

Huan Yan

Guoqing Zhang

Hongliang Xu

Linhui Gong

Jang Soon Im

Sha Feng

Juanjuan Bai

Yi Quan Zhou

Enkai Dong

Hongke Zhang

Shiduan Cheng

Xinxin Jin

Liyong Guo

Yuebai Han

Kuohai Wang

Chen Liu

Ping Dong

Yajuan Qin

Jiacheng Qi

Oleksandr Shubny

Volodymyr Zolotarev

Myhaylo Natarov

Oleksandr Shubnyj

Libin Miao

Zhenning Fan

Yishan Li

Dinh Duc Nguyen

Jianfei Liu

Ling Su

He Liu

The present disclosure provides a display panel and a manufacturing method thereof, a display apparatus and a splicing display apparatus. The display panel includes: a back plate, at least one connection lead and a first protection layer. Each of the at least one connection lead includes a main conductive layer. The first protection layer includes a first portion on two sides of the main conductive layer of the connection lead in a width direction thereof.

Display panel and manufacturing method thereof, display apparatus and splicing display apparatus

A backlight module comprises a driving backplate, which comprises multiple pads; multiple light-emitting diodes, which are electrically connected to the pads; and multiple transparent protection structures, which are located on the sides of the multiple light-emitting diodes that are away from the driving backplate, wherein the transparent protection structures cover the light-emitting diodes, there is a first distance between the center of the orthographic projection of each transparent protection structure on the driving backplate and the center of the orthographic projection of each light-emitting diode on the driving backplate; and the length of the orthographic projection of each light-emitting diode on the driving backplate is a second distance, the width of the orthographic projection of each light-emitting diode on the driving backplate is a third distance, the ratio of the first distance to the second distance is less than or equal to 1:2-1:10.

Backlight module and manufacturing method therefor, and display apparatus

A display panel, including: a plurality of pixels arranged in an array in a first direction and a second direction intersecting the first direction, each pixel including: a first sub-pixel having a first light-emitting zone configured to emit light of a first color; a second sub-pixel having a second light-emitting zone configured to emit light of a second color; and a third sub-pixel having a third light-emitting zone configured to emit light of a third color, wherein the plurality of pixels include a first pixel, the first light-emitting zone of the first pixel has a substantially polygonal shape, the substantially polygonal shape including: a first side substantially parallel to one side of the second light-emitting zone of the first pixel, and the one side of the second light-emitting zone of the first pixel being opposite to the first light-emitting zone; and a second side substantially parallel to one side of the third light-emitting zone of the first pixel, and the one side of the third light-emitting zone of the first pixel being opposite to the first light-emitting zone.

Display panel and display device

A preparation method of a nanotube hierarchically structured lithium titanate includes the steps of: S1. dispersing a titanium source into an aqueous solution containing lithium hydroxide and hydrogen peroxide and stirring to obtain a mixed solution; S2. subjecting the mixed solution obtained in step S1 to a reaction by heating to obtain a precursor having a nanowire-like structure; S3. subjecting the precursor having a nanowire-like structure obtained in step S2 to separation and drying; S4. subjecting the precursor having a nanowire-like structure after separation and drying to a low-temperature annealing treatment; S5. subjecting the precursor having a nanowire-like structure after the low-temperature annealing treatment to a liquid thermal reaction to obtain the nanotube hierarchically structured lithium titanate. The method includes a simple process and easily controllable process parameters, and may be easily scaled-up for industrial production.

Preparation method of a nanotube hierarchically structured lithium titanate and use and product thereof

A process for preparing a titanic acid salt, titanic acid, and titanium oxide having a controllable particle size and a hierarchical structure, wherein the process includes the steps of: preparing a titanium-containing peroxo-complex solution; adding a basic metal compound to the titanium-containing peroxo-complex solution to form a mixture solution; adding one of polyvinyl alcohol, hydroxypropyl methyl cellulose, and polyethylene glycol to the mixture solution to form a precursor dispersion; and subjecting the precursor dispersion to a solvothermal reaction to obtain the titanic acid salt having a hierarchical structure. The process for preparing a titanic acid salt, titanic acid, and titanium oxide having a controllable particle size and a hierarchical structure, can not only realize the regulation of morphology and particle diameter of constituent units in the hierarchical structure, but also can achieve the regulation of particle size in the hierarchical structure.

Process for preparing titanic acid salt, titanic acid, and titanium oxide having controllable particle size and hierarchical structure

The present invention provides a nanostructured titanic acid salt and a preparation process and use thereof. The process comprises preparing a dispersion containing titanium peroxy complex; slowly adding a metal compound to the dispersion containing the titanium peroxy complex to form a solution; adding an alcohol to the solution under normal temperature and normal pressure to produce the nanostructured titanic acid salt precursor precipitate in the solution, and separating the precipitate to obtain the titanic acid salt precursor; drying the precursor, and then heat treating it to obtain the nanostructured titanic acid salt product. The present invention provides a process for preparing a titanic acid salt with simple preparation process, easy control for process parameters and easy large-scale industrial production.

Nanostructured titanic acid salts and preparation process and use thereof

A display panel includes pixels arranged in an array in a first direction and a second direction. Each pixel includes a first sub-pixel having a first light-emitting zone to emit light of a first color, a second sub-pixel having a second light-emitting zone to emit light of a second color, and a third sub-pixel having a third light-emitting zone to emit light of a third color. The first, second, and third light-emitting zones are arranged in a triangle such that the first, second, and third light-emitting zones cover respective vertices of the triangle, with one side of the triangle being substantially parallel to the first direction. Any two pixels directly adjacent in the first direction have respective patterns of first, second, and third light-emitting zones, which are substantially mirror-symmetrical to each other. Any two diagonally adjacent pixels have a substantially repeating pattern of first, second and third light-emitting zones.

There provide a pixel driving circuit and driving method thereof, an array substrate and display apparatus, wherein the pixel driving circuit comprises: a data line; a gate line; a first power supply line; a second power supply line; a light emitting device connected to the second power supply line; a driving transistor connected to the first power supply line; a storage capacitor having a first terminal connected to a gate of the driving transistor and configured to transfer information including the data voltage to the gate of the driving transistor; a resetting unit configured to reset a voltage across the storage capacitor as a predetermined signal voltage; a data writing unit configured to write information including the data voltage into the second terminal of the storage capacitor; a compensating unit configured to write information including a threshold voltage of the driving transistor and information of the first power supply voltage into the first terminal of the storage capacitor; and a light emitting control unit connected to the storage capacitor, the driving transistor and the light emitting device, and configured to control the driving transistor to drive the light emitting device to emit light.

Pixel driving circuit, driving method, array substrate and display apparatus

This disclosure provides an OLED light-emitting device, a production method thereof as well as a display apparatus, and relates to the technical field of OLED display, which can enhance the internal quantum efficiency of a blue OLED light-emitting device. This OLED light-emitting device comprises a substrate, and an anode, a hole transport layer, a blue light-emitting layer and a cathode provided on the substrate; the OLED light-emitting device further comprises an Ag nanolayer located between the anode and the hole transport layer; wherein the blue light-emitting layer is a blue phosphorescent light-emitting layer; the absorption spectrum of the Ag nanolayer overlaps the emission spectrum of the blue phosphorescent light-emitting layer, and the blue phosphorescent light-emitting layer is located within the penetration depth of surface plasma of Ag nanoparticles in the Ag nanolayer. It is used in the production of a blue OLED light-emitting device and a display apparatus comprising the same.

OLED light-emitting device with silver nanolayer, and production method thereof

A touch display screen testing method and a touch display screen testing device are provided. The method includes: applying a direct current signal to a gate driving circuit of the touch display screen to turn on gate electrodes of the touch display screen simultaneously, to detect a display defect of the touch display screen, in a first testing stage of an electric performance testing process at a Cell stage of a touch display screen.

Touch display screen testing method and touch display screen testing device

The present invention provides a pixel circuit, a driving method thereof and a display device which are related to the field of display technology. The pixel circuit comprises a reset module, a compensation module, an energy storage module, a drive module, a drive control module, a power supply module and a light emitting module, the input voltage of the third power supply signal terminal is larger than the difference between the input voltage of the data signal terminal and the threshold voltage of the drive module, and is less than the input voltage of the second power supply signal terminal. The present invention is capable of discharging the driving transistor to a potential Vth within a short period, ensuring the driving transistor to be discharged completely in a short time.

Pixel circuit, driving method thereof and display device

The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.

Polysilicon thin film transistor and manufacturing method thereof, array substrate, display panel

An OLED array substrate and a method for manufacturing the same, an OLED packaging structure and a display device are provided by the present disclosure. The OLED array substrate includes thin film transistors, anodes, cathodes and organic light-emitting layers arranged between the anodes and the cathodes. The OLED array substrate further includes spacers configured to support the OLED array substrate and a packaging substrate so as to form a cell gap therebetween. Each cathode includes a first region which covers the corresponding first spacer and a second region beyond the first regions, and a thickness of the cathode at the first region is larger than a thickness of the cathode at the second region.

Organic light emitting diode array substrate, method for manufacturing the same, packaging structure and display device

The embodiments of the present invention disclose a low temperature poly-silicon (LTPS) transistor array substrate and a method of fabricating the same, and a display device. The LTPS transistor array substrate comprises a substrate; a poly-silicon semiconductor active region provided on the substrate; a gate insulated from the poly-silicon semiconductor active region; and a dielectric spacer region provided on a side wall of the gate, wherein a portion of the poly-silicon semiconductor active region corresponding to the dielectric spacer region comprises a buffer region, and the dielectric spacer region surrounds the side wall of the gate and covers the buffer region.

Low temperature poly-silicon transistor array substrate and fabrication method thereof, and display device

Growing community of inventors

Beijing, China

Liang Sun