Semiconductor Manufacturing International (shanghai) Corporation

Shanghai Sansi Technology Co. Ltd.

Shanghai Sansi Electronics Engineering Co., Ltd.

Jiashan Sansi Photoelectric Technology Co., Ltd

Liang Liang Guo

Ming Chen

Yonghong Qiu

Jiye Wu

A method for manufacturing a semiconductor device includes providing a substrate having a front surface and a back surface, forming first and second through holes in the substrate, filling the first and second through holes with metals, forming a subassembly on the front surface of the substrate. The subassembly includes a first metal layer and a second metal layer insulated from the first metal layer, the first metal layer is electrically connected to the metal filled in the first through hole, the second metal layer is electrically connected to the metal filled in the second through hole, and a metal connection pad is on the substrate and surrounds the subassembly. The method also includes providing a cap assembly including a metal connection member, bonding the cap assembly to the subassembly, and thinning the back surface of the substrate to expose the first and second through holes.

Wafer level packaging for semiconductor devices

A semiconductor device includes a substrate having a front surface and a back surface, a subassembly on the front surface of the substrate including first and second metal layers insulated from each other, a cap assembly including a metal connection member, and first and second through holes penetrating through the substrate and filled with metals. The metal filled in the first through hole is electrically connected to the first metal layer, and the metal filled in the second through hole is electrically connected to the second metal layer. The semiconductor device also includes a metal connection pad on the substrate that entirely surrounds the subassembly and is aligned with the metal connection member. The interface between the cap assembly and the subassembly is free of through holes to prevent a resistance change and shield the subassembly from interference.

Wafer level packaging approach for semiconductor devices

A LED light bar includes several LED light sources and a bar light source mounting base. The light source mounting base is made of an insulating and heat-conducting material. An electrical layer having several metal electricity-conducting plates is embedded in an inner part of the light source mounting base. The LED light sources are welded on the metal electricity-conducting plates to form an electrical electricity-conducting circuit. lighting sides of the LED light sources are exposed on a surface of the light source mounting base. The light source mounting base and the metal electricity-conducting plates are formed into a whole. Each LED light source is covered by lenses.

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Shanghai, China

Liang Liang Guo