Taiwan Semiconductor Manufacturing Comp. Ltd.

Liang-Kun Huang

Chao-Cheng Chen

Shyh-Chyi Wong

Chen-Fa Lu

Mei-Ling Chen

Ssu-Pin Ma

Chin-Hsiung Ho

Chaochieh Tsai

Heng-Ming Hsu

A method for preventing or reducing corrosion of copper containing semiconductor features during chemical mechanical polishing (CMP) including providing a semiconductor wafer polishing surface including a copper layer overlying a copper filled anisotropically etched feature; polishing the semiconductor wafer polishing surface according to a first CMP process to remove at least a portion the copper layer to reveal a portion of an underlying barrier/adhesion layer; polishing the semiconductor wafer polishing surface according to a second CMP process including applying a neutralizing solution; polishing the semiconductor wafer polishing surface according to a third CMP process including applying a copper corrosion inhibitor solution; and, polishing the semiconductor wafer polishing surface according to at least a fourth CMP process to remove a remaining portion of the underlying barrier/adhesion layer.

Method for preventing Cu CMP corrosion

A new method is provided for the creation of an inductive over the surface of a semiconductor substrate. A first layer of metal is created in a layer of dielectric, a second layer of metal is created overlying the first layer of metal. The first layer of metal combined with the second layer of metal form an inductor of increased height, reducing the resistivity of the inductor, increasing the Q value of the inductor. The new method of creating an inductor can be combined with creating contact points that connect to contact points in the active region of the surface of a semiconductor substrate.

High Q inductor with Cu damascene via/trench etching simultaneous module

Growing community of inventors

Yunlin, Taiwan

Liang-Kun Huang