Globalwafers Co., Ltd.

Liang-Chin Chen

William L Luter

Carissima Marie Hudson

Sumeet S Bhagavat

Chun-Sheng Wu

Yu-Chiao Wu

Chieh Hu

Hsien-Ta Tseng

A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process

Growing community of inventors

Zhubei, Taiwan

Liang-Chin Chen