Soochow University

Innoscience (suzhou) Technology Co., Ltd.

Emerson Climate Technologies (suzhou) Co., Ltd.

Innoscience (suzhou) Semiconductor Co., Ltd.

Copeland Climate Technologies (suzhou) Co. Ltd.

Siemens Ltd., China

Liang Chen

Xi Tao

King Yuen Wong

Haoning Zheng

Jun Wang

Yu Xia

Weiguo Huang

Zhongkui Zhu

Juanjuan Shi

Yang Liu

Xingxing Jiang

Dong Wang

Changqing Shen

Jianping Lang

Chunyan Ni

Hao Li

Aiwen Zhang

Yongjun Shen

Jingxi Liu

Xiao Zhang

Piao Lei

Minjie Chen

Yufeng Wang

Hongbo Que

Chunyu Liu

Hai Liu

Lin Kong

Chuancang Ding

Hai Gang Bie

A semiconductor device includes a first and a second nitride-based semiconductor layers and a gate structure. The gate structure includes an outer spacer, an inner spacer and a gate electrode. The outer spacer has at least two opposite inner sidewalls to define a gate trench. The inner spacer is within the gate trench. The gate electrode disposed in the gate trench and covered by the inner spacer, wherein the inner spacer and the gate electrode extend downward to collaboratively form a bottom portion of the gate structure with a first width greater than a second width of a bottom surface of the gate electrode.

Semiconductor device and method for manufacturing the same

A III-nitride-based semiconductor device is provided. The III-nitride semiconductor device includes a silicon substrate having a surface with a periodic array of recesses formed therein. A discontinuous insulating layer is formed within each recess of the periodic array of recesses such that a portion of the silicon substrate surface between adjacent recesses is free from coverage of the discontinuous insulating layer. A first epitaxial III-nitride semiconductor layer is formed over the silicon substrate with the periodic array of recesses and discontinuous insulating layer formed thereon. A second III-nitride semiconductor layer is disposed over the first III-nitride semiconductor layer and has a bandgap greater than a bandgap of the first III-nitride semiconductor layer. At least one source and at least one drain are disposed over the second III-nitride semiconductor layer. A gate is also disposed over the second III-nitride semiconductor layer between the source and the drain.

III-nitride-based semiconductor devices on patterned substrates and method of making the same

The present invention discloses a fluorescent chromic material having a chemical formula of [PPyCuI], wherein PPyis tripyridylphosphine. The present invention also provides a method for preparing the fluorescent chromic material, and the use of the fluorescent chromic material in the detection of dichloromethane vapor. The fluorescent chromic material of the present invention has simple synthesis steps, high yield, and capability of large production; and can be used as a fluorescent probe for detecting dichloromethane vapor. It has the advantages of simple operation, high selectivity, high sensitivity, good cycle performance and good stability.

Fluorescent chromic material, preparation method and use thereof

A valve needle assembly includes a valve stem, a valve needle, an elastic element, and a stop structure. The valve needle is connected to the valve stem and axially movable relative to the valve stem. The elastic element is provided between the valve stem and the valve needle. The stop structure is configured to limit axial movement of the valve needle relative to the valve stem so as to prevent the valve needle from prematurely opening the valve hole of the electronic expansion valve under the force of fluid. The electronic expansion valve includes the valve needle assembly.

Valve needle assembly and electronic expansion valve having the valve needle assembly

The invention provides an adaptive manifold probability distribution-based bearing fault diagnosis method, including constructing transferable domains and transfer tasks; converting a data sample in each transfer task into frequency domain data via Fourier transform, inputting the frequency domain data into a GFK algorithm model, and calculating a manifold feature representation matrix related to a bearing fault in each transfer task by using the GFK algorithm model; calculating a cosine distance between centers of a target domain and a source domain in each transfer task according to a manifold feature representation, and defining a target function of in-domain classifier learning; then solving the target function, to obtain a probability distribution matrix of the target domain; and selecting a label corresponding to the largest probability value corresponding to each data sample in the target domain from the probability distribution matrix as a predicted label of the data sample in the target domain.

Adaptive manifold probability distribution-based bearing fault diagnosis method

An electronic expansion valve is provided including: a valve body provided with a first port and a second port, a first cavity being defined in the valve body and being in fluid communication with the first port, the valve body also being provided with a valve port between the second port and the first cavity; a drive mechanism including a rotor having a rotor screw and a stator; a valve spindle assembly at least partially disposed in the valve body and being capable of operatively cooperating with the rotor screw for reciprocating motion to adjust the degree of opening of the valve port; and a second cavity isolated and sealed off from the first cavity, wherein a balancing passage is formed in the rotor screw and the valve spindle assembly to enable the second cavity to be in fluid communication with the second port via the balancing passage.

Electronic expansion valve

Growing community of inventors

Suzhou, China

Liang Chen