United Microelectronics Corp.

Lian-Hua Shih

Yi-Ching Wu

Ming-Te Chen

Jiann-Fu Chen

Chin-Jen Cheng

Ching-Hsing Hsieh

Yung-Yu Yang

Chia-Chi Chang

Feng-Chi Chung

Li-Ting Lin

Meng-Chih Chang

Ming-Tung Wang

Chiu-Ping Chang

A method of monitoring a processing system for processing a substrate is provided. The method includes the following steps: acquiring data from the processing system for a plurality of parameters, the data including a plurality of data values; grouping the parameters into a plurality of sub-groups, each of the sub-groups including a plurality of correlated parameters; constructing a principle components analysis (PCA) model from the data values for the correlated parameters in a first one of the sub-groups, including normalizing the data values in the first one of the sub-groups with a first weighting factor and a second weighting factor, wherein the first weighting factor is different from the second weighting factor; and determining a statistical quantity using the PCA model.

Method of monitoring processing system for processing substrate

A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si&#x2014;H bonds and a plurality of N&#x2014;H bonds, and a ratio of Si&#x2014;H bonds to N&#x2014;H bonds being equal to or smaller than 0.5.

Method for fabricating a metal-insulator-metal capacitor

A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor.

Metal-insulator-metal capacitor and method for fabricating the same

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Chiayi, Taiwan

Lian-Hua Shih