Hewlett-packard Development Company, L.P.

Liam Cheevers

Kevin Dooley

Lorraine Byrne

David Fitzpatrick

Roger McQuaid

Graeme Scott

Kenneth Hickey

John Larkin

Roger Mcquaid

A method for forming a fluidic ejection device is described. The method includes depositing a first layer on a silicon wafer, the first layer including a first photoresist, and exposing, at a first energy level, a portion of the first photoresist. The method also includes depositing a second layer on the first layer, the second layer including a second photoresist that is more sensitive to light than the first photoresist, and exposing, at a second energy level, a portion of the second photoresist. The second energy level is less than the first energy level. The method also includes developing unexposed portions of the first photoresist and the second photoresist to form an enclosed firing chamber and a nozzle.

Fluidic ejection device with layers having different light sensitivities

A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer away from a raised feature. An interconnect is in contact with the raised feature through the reflow via.

Interconnects through dielectric vias

A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer. An interconnect is in contact through the reflow via.

Interconnects through dielecric vias

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Leixlip, Ireland

Liam Cheevers