Huawei Technologies Co., Limited

Wangsu Science & Technology Co., Ltd.

Li Ye

Xu Zhang

Xiaowei Chen

Yajuan Zheng

Wenjing Li

One example magnetic random access memory includes a plurality of structural units and a plurality of voltage control lines. The plurality of voltage control lines are in parallel with each other. Planes in which the plurality of structural units are located are in parallel with each other, and a plane in which each of the plurality of structural units is located is perpendicular to the plurality of voltage control lines. Each structural unit includes a multi-layer storage structure including multiple layers that are stacked in sequence. Each layer of the multi-layer storage structure includes an electrode line and a plurality of storage units disposed on the electrode line. Each of the plurality of storage units includes a magnetic tunnel junction. A first end of each storage unit is connected to the electrode line, and a second end of each storage unit is connected to one of the plurality of voltage control lines.

Multi-layered magnetic random access memory and electronic device

Method and device of storage capacity evaluation based on a CDN application are provided. The method includes: for any cache server corresponding to a target service, using files stored before a preset time node as old files in the cache server; determining a proportion of the old files in all files stored by the cache server and a visiting rate of the old files within a preset visit time range; determining an adjustment type of a storage capacity of the cache server according to the proportion of the old files and the visiting rate of the old files, where the adjustment type at least includes capacity to-be-expanded, capacity to-be-reduced and capacity unchanged; and determining an adjustment type of a storage capacity of the target service according to adjustment types of storage capacities of all cache servers corresponding to the target service.

Growing community of inventors

Shanghai, China

Li Ye