United Microelectronics Corp.

Li-Wu Tsao

Tse-Yi Lu

Yi-Min Jen

Ya-Ling Hung

A method for manufacturing trench isolation, comprising firstly, defining a trench isolation over the substrate by photolithography and etching technique. Beside, by way of a spacer fabricating process to form a spacer around each of the two sides of the trench isolation. Therefore, a sharp corner in the crossing region between the trench isolation and an active area adjacent thereto in the substrate is smoothed, and the process window for a sequential gate polysilicon etching is improved, as well as the opportunity to leave polysilicon residue in the corner is eliminated. The short circuit between polysilicon gates is also avoided.

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Taipei, Taiwan

Li-Wu Tsao