International Business Machines Corporation

Li-Wen Hung

John Ulrich Knickerbocker

Bing Dang

Jeffrey Donald Gelorme

Paul Stephen Andry

Jui-Hsin Lai

Qianwen Chen

Cornelia Tsang Yang

Russell Alan Budd

Reinaldo Ariel Vega

Chia-Yu Chen

Jae-Woong Nah

Robert David Allen

Ko-Tao Lee

Shu-Jen Han

Kenneth Parker Rodbell

Bucknell Chapman Webb

Qing Cao

Robert L Wisnieff

Cornelia K Tsang

Hari V Mallela

Cornelia Kang-I Tsang

Wanki Kim

Takashi Ando

Evan G Colgan

Ratnam Sooriyakumaran

Fuad Elias Doany

Linda Karin Sundberg

Bo Wen

Pierce I-Jen Chuang

Choonghyun Lee

Eugene John O'Sullivan

Elbert Emin Huang

Eric Andrew Joseph

Katsuyuki Sakuma

Leathen Shi

Martin O Sandberg

Sebastian Ulrich Engelmann

Eric Peter Lewandowski

Yang Liu

Daniel Rugar

Adinath S Narasgond

Harry Jonathon Mamin

Rajeev Narayanan

Jae-woong Nah

Joseph Finley

Jeff Waksman

Adinath Narasgond

One or more systems, devices, methods of use and/or methods of fabrication provided herein relate to a superconducting device that can be operated with minimal electric field energy coupling at surface layers of the superconducting device and/or that can have a small footprint. According to one embodiment, a device can comprise a Josephson junction located between a first capacitor portion and a second capacitor portion of a capacitor, wherein at least a trenched section of the first capacitor portion is located beneath a surface of a substrate, and wherein at least a trenched section of the second capacitor portion is located beneath the surface of the substrate. According to another embodiment, a device can comprise a capacitor disposed within a substrate layer and the capacitor comprising a pair of material-filled trenches in the substrate layer, and a Josephson junction coupled to the capacitor.

Quantum circuit with trench capacitor

A Static Random Access Memory (SRAM) device in a binary neural network is provided. The SRAM device includes an SRAM inference engine having an SRAM computation architecture with a forward path that include multiple SRAM cells forming a chain of SRAM cells such that an output of a given one of the multiple SRAM cells is an input to a following one of the multiple SRAM cells. The SRAM computation architecture is configured to compute a prediction from an input. The SRAM computation architecture is configured to store ternary data and perform local computations on the ternary data.

Inference focus for offline training of SRAM inference engine in binary neural network

A Static Random Access Memory (SRAM) device in a binary neural network is provided. The SRAM device includes an SRAM inference engine having an SRAM computation architecture with a forward path that include multiple SRAM cells. The multiple SRAM cells are configured to form a chain of SRAM cells such that an output of a given one of the multiple SRAM cells is an input to a following one of the multiple SRAM cells. The SRAM computation architecture is configured to compute a prediction from an input.

Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Handler bonding and debonding for semiconductor dies

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 &#x3bc;m to about 100 &#x3bc;m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

High speed handling of ultra-small chips by selective laser bonding and debonding

A method of manufacturing a multi-layer wafer is provided. Under bump metallization (UMB) pads are created on each of two heterogeneous wafers. A conductive means is applied above the UMB pads on at least one of the two heterogeneous wafers. The two heterogeneous wafers are low temperature bonded to adhere the UMB pads together via the conductive means. At least one stress compensating polymer layer may be applied to at least one of two heterogeneous wafers. The stress compensating polymer layer has a polymer composition of a molecular weight polymethylmethacrylate polymer at a level of 10-50% with added liquid multifunctional acrylates forming the remaining 50-90% of the polymer composition.

Wafer level integration including design/co-design, structure process, equipment stress management and thermal management

A quantum device includes a qubit chip having a plurality of qubits and an interposer attached to and electrically connected to the qubit chip. The device also includes a substrate handler attached to one side of the qubit chip or to one side of the interposer, or both so as to be thermally in contact with the qubit chip or the interposer, or both. The substrate handler includes a plurality of vias, at least a portion of plurality of vias being filled with a non-superconducting material, the non-superconducting material being selected to dissipate heat generated in the qubit chip, the interposer or both.

Permanent wafer handlers with through silicon vias for thermalization and qubit modification

Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

A drug delivery form includes a drug and electronics. The electronics includes memory(ies) having drug delivery form information, including information about the drug and about at least part of a supply chain from manufacture of the drug delivery form to a current location in the supply chain. The electronics includes communication circuitry configured to read data from and write data to the drug delivery form information. An apparatus includes memory(ies) having computer readable code, and processor(s). The processor(s) cause the apparatus to perform operations including communicating with a drug delivery form including a drug and drug delivery form information, including information about the drug and about at least part of a supply chain from manufacture of the drug delivery form to a current location in the supply chain. The processor(s) cause the apparatus to perform reading data from or writing data into the drug and drug delivery form information.

Electronics miniaturization platform for medication verification and tracking

A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.

Heterogeneous miniaturization platform

Methods and systems for activity monitoring include capturing an infrared image of an environment that comprises at least one patient being monitored and at least one infrared-emitting tag. A relationship between the patient being monitored and the at least one infrared-emitting tag is determined. An activity conducted by the patient being monitored is determined based on the relationship between the patient being monitored and the at least one infrared-emitting tag. A course of treatment for the patient being monitored is adjusted based on the determined activity.

Infrared detectors and thermal tags for real-time activity monitoring

Methods of fabricating a probe are described. In an example, a structure may be formed on a surface of a substrate. The structure may include the probe, a hinge, and an anchor arranged linearly, where an angle is formed between the probe and the hinge. The hinge may be positioned between the probe and the anchor, and the structure may be parallel to the substrate. An amount of solder may be deposited on an area of the structure that spans from a portion of the probe to a portion of the anchor, and across the hinge. The deposited solder may be reshaped by an execution of a solder reflow process. The reshape of the deposited solder may cause the probe to rotate about the hinge in order to reduce the angle between the probe and the hinge.

Planar fabrication of micro-needles

A thermal tag for activity monitoring. The thermal tag includes a base layer having a plurality of metal lines to provide a conductive path, and a pattern layer having one or more infrared emitting features positioned over portions of the conductive path, wherein at least one infrared emitting feature couples to the conductive path to emit a predetermined infrared pattern in accordance with nearby activity.

Thermal tags for real-time activity monitoring and methods for fabricating the same

A technique relates to a semiconductor device. First nanowires are formed on a first substrate, the first nanowires being electrically coupled to one or more first electrical sites on the first substrate. Second nanowires are formed on a second substrate, the second nanowires being electrically coupled to one or more second electrical sites on the second substrate. The first nanowires and the second nanowires are electrically coupled such that the one or more first electrical sites are electrically coupled to the one or more second electrical sites.

Nanowire enabled substrate bonding and electrical contact formation

Multi-voltage threshold vertical transport transistors and methods of fabrication generally include forming the transistors with vertically oriented silicon fin channels for both the n-type doped field effect transistors (nFET) and the p-type doped field effect transistors (pFET). A silicon oxynitride interfacial layer is provided on sidewalls of the fins in the nFET and a silicon dioxide interfacial with aluminum is provided on sidewalls of the fins in the pFET to provide an aluminum induced dipole. A high k dielectric overlays the interfacial layers and a common work function metal overlays the high k dielectric layer to define a gate structure.

Multi-threshold vertical FETs with common gates

Growing community of inventors

Mahopac, NY, United States of America

Li-Wen Hung