Taiwan Semiconductor Manufacturing Comp. Ltd.

Li-Wen Huang

Kuo-Cheng Lee

Ping-Hao Lin

Chung-Liang Cheng

Cheng-Ming Wu

Chun-Lin Fang

Kuan-Ling Pan

A semiconductor device includes a first type of light sensing units, where each instance of the first type of light sensing units is operable to receive a first amount of radiation; and a second type of light sensing units, where each instance of the second type of light sensing units is operable to receive a second amount of radiation, and the second type of light sensing units is arranged in an array with the first type of light sensing units to form a pixel sensor. The first amount of radiation is smaller than the second amount of radiation, and at least a first instance of the first type of light sensing units is adjacent to a second instance first type of light sensing unit.

Semiconductor device, semiconductor image sensor, and method of manufacturing the same

An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

Pixel sensors and methods of forming the same

Growing community of inventors

Changhua, Taiwan

Li-Wen Huang