Fujian Jinhua Integrated Circuit Co., Ltd.

Li-Wei Feng

Janbo Zhang

Yu-Cheng Tung

The present disclosure relates to a semiconductor memory device and a fabricating method thereof, includes a substrate, a plurality of gate structures, a plurality of isolation fins, at least one bit line, and a plug. The gate structures are disposed in the substrate, being parallel with each other along a first direction. The isolation fins are disposed on the substrate, parallel with each other and extending along the first direction, over each of the gate structures respectively. The bit line is disposed on the substrate to extend along a second direction being perpendicular to the first direction. The bit line includes a plurality of pins extending toward the substrate, being alternately arranged with the isolation fins along the second direction. The plug is disposed on the substrate, being alternately with the bit line in the first direction.

Semiconductor memory device comprises a bit line having a plurality of pins extending toward a substrate

A dynamic random access memory device includes a substrate having a first active region, a first isolation region, a second active region, and a second isolation region arranged in order along a first direction. A first bit line is disposed on the first active region and in direct contact with the first active region. A second bit line is disposed on the second isolation region. An insulating layer is disposed between and separate the second bit line and the second isolation region. A storage node contact structure is disposed between the first bit line and the second bit line and is in direct contact with a top surface of the second active region, a sidewall of the first isolation region, and a sidewall of the second isolation region.

Dynamic random access memory device

The present disclosure relates to a method of fabricating a semiconductor device, the semiconductor device includes a substrate, a plurality of gate structures, a plurality of isolation fins, and at least one bit line. The gate structures are disposed in the substrate, with each of the gate structures being parallel with each other and extending along a first direction. The isolation fins are disposed on the substrate, with each of the isolation fins being parallel with each other and extending along the first direction, over each of the gate structures respectively. The at least one bit line is disposed on the substrate to extend along a second direction being perpendicular to the first direction. The at least one bit line comprises a plurality of pins extending toward the substrate, and each of the pins is alternately arranged with each of the isolation fins along the second direction.

Method of fabricating semiconductor device having bit line comprising a plurality of pins extending toward the substrate

The present disclosure relates to a semiconductor memory device including a substrate, a plurality of buried word lines, a plurality of bit lines, and a plurality isolation fins. The substrate includes a plurality of active areas and a shallow trench isolation. The buried word lines are disposed in the substrate. The bit lines are disposed on the substrate. The isolation fins are disposed on the substrate, over each of the buried word lines respectively, wherein a portion of the isolation fins is disposed under the bit lines and overlapped with the bit lines.

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Quanzhou, China

Li-Wei Feng