Seagate Technology Incorporated

Li Wan

Michael C Kautzky

Tong Zhao

Xiaolu Kou

Michael Allen Seigler

Chubing Peng

Huaqing Yin

YongJun Zhao

Martin Giles Blaber

Tae-Woo Lee

Nan Zhou

A method involves forming a metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. A surface of the metal layer defines a first metal bonding layer. A second metal bonding layer is provided on a target substrate having recording head subassemblies. Mating surfaces of the first and second metal bonding layers are activated and the carrier wafer is flipped and joined with the target substrate such that the first and second metal bonding layers are bonded and the metal layer is integrated with the recording head as a near-field transducer.

Single-grain near-field transducer and process for forming same

A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2<T1, resulting in a layer of the template material with thickness T1−T2. The ion beam milling is performed at a channeling angle relative to a deposition plane of the wafer, the channeling angle defined relative to a channeling direction of a crystalline microstructure of the template material. After the repetitions, additional material is deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

Thin-film crystalline structure with surfaces having selected plane orientations

A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

A heat-assisted magnetic recording head includes a near-field transducer including a plasmonic disk and a multilayer near-field emitter. The multilayer near-field emitter is configured to produce a hot spot on a proximal magnetic disk. The multilayer near-field emitter is disposed in a down-track direction relative to and coupled to the plasmonic disk.

Heat-assisted magnetic recording head with a near-field transducer having a multilayer near-field emitter

A recording head has a near-field transducer proximate a media-facing surface of the recording head. A waveguide overlaps and delivers light to the near-field transducer. Two subwavelength focusing mirrors are at an end of the waveguide proximate the media-facing surface. The subwavelength mirrors are on opposite crosstrack sides of the near-field transducer and separated from each other by a crosstrack gap. The subwavelength focusing mirrors each include a core having a first edge exposed at the media-facing surface. The core formed of a core material that is resistant to mechanical wear and corrosion, such as a dielectric or robust metal. A liner covers a second edge of the core facing the near-field transducer. The liner includes a plasmonic metal that is different than the core material, such as Au or Al.

Heat-assisted recording head having mechanically robust subwavelength mirror with plasmonic liner

A method includes forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a sacrificial wafer. An anchor layer is formed on the single-crystal-like metal layer. The single-crystal-like metal layer is separated from the sacrificial wafer via the anchor layer. The single-crystal-like metal layer is transported via the anchor layer to a target substrate having one or more recording head subassemblies. The single-crystal-like metal layer is joined with the recording head, the single-crystal-like metal layer being integrated with the recording head as a near-field transducer.

Processing for forming single-grain near-field transducer

A thin film structure (e.g., a near-field transducer), includes a first surface parallel to a substrate on which the thin film structure is deposited and two other surfaces orthogonal to the first surface. The first surface and the two other surfaces have respective first, second, and third selected plane orientations with respective first, second, and third atomic packing factors. The first, second, and third selected plane orientations are selected to maximize an average of the first, second, and third atomic packing factors.

Heat assisted magnetic recording (HAMR) devices that includes a near field transducer, the near field transducer including alloys of a first element selected from: platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), and osmium (Os); and a second element selected from; hafnium (Hf), niobium (Nb), tantalum (Ta), titanium (Ti), vanadium (V), and zirconium (Zr).

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Eden Prairie, MN, United States of America

Li Wan