Winbond Electronics Corporation

Li-Ting Wang

Kai Jen

Ming-Chung Chiang

Yi-Hao Chien

A semiconductor structure includes a semiconductor substrate, a gate stack disposed over the semiconductor substrate, a first oxide spacer disposed along a sidewall of the gate stack, a protection portion disposed over the first oxide spacer, and an interlayer dielectric layer disposed over the semiconductor substrate. The first oxide spacer and the protection portion are disposed between the gate stack and the interlayer dielectric layer.

Semiconductor structure with protection portions and method for forming the same

Provided is a word-line structure including a substrate, a word line, and an epitaxial pattern. The word line is embedded in the substrate. The word line includes a conductive layer, a barrier layer, an insulating layer, and a gate dielectric layer. The barrier wraps a lower portion of the conductive layer. The insulating layer wraps an upper portion of the conductive layer. The gate dielectric layer surrounds the insulating layer and the barrier layer to electrically isolate the barrier layer from the substrate. The epitaxial pattern is disposed between the insulating layer and the substrate and in contact with the substrate. A memory device including the word-line structure and a method of manufacturing the same are also provided.

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Taichung, Taiwan

Li-Ting Wang