Silicon Motion, Inc.

Li-Shuo Hsiao

Chang-Kai Cheng

Yu-Wei Chyan

A method for controlling operations of a memory device, the memory device and the controller thereof, and the associated electronic device are provided. The method can comprise: before a voltage-drop event regarding a driving voltage occurs, mapping a rising reference voltage and a falling reference voltage to a first reference voltage and a second reference voltage, respectively; when the voltage-drop event occurs, pausing at least one access operation to a non-volatile (NV) memory, and mapping the rising reference voltage and the falling reference voltage to another first reference voltage and another second reference voltage, respectively; and when the voltage-drop event ends, mapping the rising reference voltage and the falling reference voltage to the first reference voltage and the second reference voltage, respectively.

Method for controlling operations of memory device, associated memory device and controller thereof, and associated electronic device

A method for controlling operations of a memory device, the memory device and the controller thereof, and the associated electronic device are provided. The method can comprise: before a voltage-drop event regarding a driving voltage occurs, mapping a rising reference voltage and a falling reference voltage to a first reference voltage and a second reference voltage, respectively; when the voltage-drop event occurs, pausing at least one access operations to a non-volatile (NV) memory, and mapping the rising reference voltage and the falling reference voltage to another first reference voltage and another second reference voltage, respectively; and when the voltage-drop event ends, mapping the rising reference voltage and the falling reference voltage to the first reference voltage and the second reference voltage, respectively.

The present invention provides a data-storage device including a flash memory and a controller. The flash memory includes a plurality of blocks, and each of the blocks has a plurality of pages, wherein each of the pages has a plurality of sub-pages and a plurality of spare areas, each of the spare areas is arranged to store a spare data sector, and the spare data sector respectively corresponds to the sub-pages. The controller is arranged to access the sub-pages according to the spare data sector.

Data storage device and data access-method

A detection method for detecting a programming operation of a flash memory includes issuing a program command of the programming operation to the flash memory, by a controller, issuing a first read status command to the flash memory, by the controller, before a page program time of the flash memory has been reached, and determining whether the programming operation is performed in the flash memory according to a first memory status corresponding to the first read status command provided by the flash memory.

Flash memory data storage device and programming method thereof

A data storage device includes a flash memory and a controller. The flash memory includes a memory array. The controller performs a programming operation for the flash memory. After the controller issues a program command of the programming operation to the flash memory, the controller issues a first read status command to the flash memory before a page program time of the flash memory has been reached, and the controller determines whether the programming operation is performed in the flash memory according to a first memory status provided by the flash memory.

An exemplary embodiment provides an electronic device including a controller, a first flash memory and a second flash memory. The first flash memory stores a first data sector. The second flash memory stores a second data sector, wherein the first data sector and the second data sector are the same, and the first data is stored in a plurality of pages of the first flash memory and the second data is stored in a plurality of pages of the second flash memory. The controller produces a third data according to the first data sector and the second data sector when the controller determines that the first data sector stored in the first flash memory is damaged.

Electronic device and data-management method thereof

A flash device is provided. A flash memory includes a plurality of pages. A controller coupled to the flash memory includes an operating unit, an error correction code (ECC) decoder and a processing unit. The operating unit receives a plurality of bytes of the page which are from the flash memory and corresponding to a read command, and obtains an operating result according to a logic level of each bit of each of the bytes. The ECC decoder decodes the bytes of the page according to an ECC code. The processing unit determines whether the page is valid data according to the decoded bytes, and determines whether the page is an empty page according to the operating result when the page is not the valid data.

Flash device and operating method thereof

A data storage device and an operating method for a FLASH memory are disclosed. The disclosed data storage device includes a FLASH memory and a controller. The FLASH memory provides a storage space which is stored with a first storage type system information and a second storage type system information. Data recognition for the first storage type system information is stricter than that of the second storage type information. The controller reads the storage space of the FLASH memory and performs an error checking and correction process on data read from the storage space, and, based on the storage type system information, among the first and second storage type information, which first passes the error checking and correction process, the controller operates the FLASH memory.

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Zhudong, Taiwan

Li-Shuo Hsiao