Taiwan Semiconductor Manufacturing Comp. Ltd.

Au Optronics Corporation

Wistron Corporation

Gudeng Precision Industrial Co., Ltd.

Li Shu Chen

Jenn-Jia Su

Wen-Hao Hsu

Chao-Yuan Chen

Jyh-Nan Lin

Jun-Hao Wang

Tai-Hsun Wu

Chia-Chih Kao

Ding-I Liu

Po-Hsiung Leu

Yu-Chen Lin

Ching-Hao Chen

Ken-Yu Liu

Geng-Yu Liu

Chin-Feng Sun

Pan Yung Shuen

Tsung-Dar Lee

The disclosure relates to a mount assembly for add-in card including a base plate, a tray, and a handle. The tray is slidably disposed on the base plate. The handle includes a pivot portion and a tray installation portion. The pivot portion is pivotally disposed on the base plate. The tray installation portion is pivotally and slidably disposed on the tray. In addition, the disclosure also relates to an electronic device having the mount assembly and a chassis for the electronic device.

Mount assembly for add-in card, electronic device, and chassis

A handle device is configured for a chassis body. The chassis body includes a main part and a cover plate. The handle device includes a base part and a handle part. The base part is disposed on the cover plate. The handle part includes an operative part, a coupling part and a shaft part. The coupling part is connected to the operative part. The shaft part is connected to the coupling part. The coupling part of the handle part is pivotally coupled to the base part. The shaft part is rotatably disposed on the main part. The handle part is movable relative to the base part so as to disengage the cover plate from the main part.

Handle device, chassis and server

Structures and formation methods of a semiconductor device structure are provided. A method includes depositing a first layer including Al atoms to cover a first dielectric layer in a first conductive feature. The method also includes depositing a second layer including N atoms over the first layer. The first layer and the second layer form an etch stop layer including aluminum nitride. The etch stop layer includes vacancies and has an atomic percentage of Al to Al and N. The method also includes filling the vacancies in the etch stop layer with additional N atoms to reduce the atomic percentage of Al to Al and N. In addition, the method includes forming a second dielectric layer over the etch stop layer. The method also includes forming a second conductive feature in the second dielectric layer and the etch stop layer to be connected to the first conductive feature.

Structure and formation method of interconnection structure of semiconductor device

A method of forming an interlayer dielectric film above a metal gate of a metal oxide semiconductor device comprises forming a metal gate above a semiconductor substrate; and forming the interlayer dielectric film above the metal gate by reacting a silicon-containing compound as precursor and a reactant for oxidizing the silicon-containing compound. The silicon-containing compound has the formula:Si(A)(B)(C)(D)&#x2003;&#x2003;(I)wherein x is in the range of from 1 to 9; y+z+m+n is in the range of from 4 to 20; and A, B, C, and D independently represent a functional group connecting with a silicon atom. The functional group is selected from a group consisting of alkyl, alkenyl, alkynyl, aryl, alkylaryl, alkoxyl, alkylcarbonyl, carboxyl, alkylcarbonyloxy, amide, amino, alkylcarbonylamino, &#x2014;NO, and &#x2014;CN.

Method of forming interlayer dielectric film above metal gate of semiconductor device

A three-dimensional display including a display panel and a phase retardation film is provided. The display panel has a plurality of first pixel regions and a plurality of second pixel regions arranged in arrays. The phase retardation film is configured on a surface of the display panel. Here, the phase retardation film has a plurality of first retardation regions and a plurality of second retardation regions that are arranged alternately. The first retardation regions have the same phase retardation, the second retardation regions have the same phase retardation, and the phase retardation of the first retardation regions is different from that of the second retardation regions. All the regions of the phase retardation film have the same optical transmittance. A displaying method adaptable to the three-dimensional display is also provided.

Three-dimensional display and displaying method thereof

A three-dimensional (3D) display including a display panel and a phase retardation film is provided. The display panel has a plurality of first pixel regions and a plurality of second pixel regions that are arranged as an array. The phase retardation film is disposed on the surface of the display panel. The phase retardation film has a plurality of first retardation regions and a plurality of second retardation regions that are alternately arranged. The first retardation regions have the same phase retardation, the second retardation regions have the same phase retardation, and the phase retardation of the first retardation regions is different from that of the second retardation regions. All the regions of the phase retardation film have the same transmittance. A display method adaptable to the 3D display is also provided.

Three-dimensional display and display method thereof

A gas filling apparatus used to fill a photomask box with gas such as nitrogen or other inert gas. The gas filling apparatus of the present invention has a gas filling chamber provided with a plurality of first pillared elements, a plurality of second pillared elements, at least one gas inlet, at least one gas outlet, and a plurality of clamping elements; wherein the first pillared elements are used to couple with the recesses on a cover member of the photomask box, the second pillared elements are used to prop against the peripheral of a cover member of the photomask box, and the clamping elements respectively prop against two opposite sides of the cover member of photomask box, whereby the gas inlets and the gas outlets are respectively coupled with the through holes formed on the lower cover member of the photomask box and the gas can be filled into and exhausted from the photomask box.

Gas filling apparatus for photomask box

Growing community of inventors

Taipei, Taiwan

Li Shu Chen