International Business Machines Corporation

University of Texas System

University of Houston System

Li Shi

Uttam Shymalindu Ghoshal

Steven Alan Cordes

James Patrick Doyle

Matthew J Farinelli

Chandler Todd McDowell

David R DiMilia

Snigdha Ghoshal

David William Boerstler

Kevin John Nowka

Zhifeng Ren

Gang Paul Chen

Juan-Antonio Carballo

Jeffrey L Burns

Krishnendu Roy

Xi Chen

Matthew J Hall

Sean Sullivan

Fei Tian

Bai Song

David Broido

Luz Cristal S Glangchai

Navaneetha Krishnan Ravichandran

Ke Chen

A method for growing bulk boron arsenide (BA) crystals, the method comprising utilizing a seeded chemical vapor transport (CVT) growth mechanism to produce single BAs crystals which are used for further CVT growth, wherein a sparsity of nucleation centers is controlled during the further CVT growth. Also disclosed are bulk BAs crystals produced via the method.

Unusual high thermal conductivity in boron arsenide bulk crystals

A thermoelectric power generator for converting thermal energy into electrical energy. The thermoelectric power generator includes a heat exchanger configured to extract thermal energy from an exhaust gas stream. The heat exchanger includes fins in contact with a boundary of the heat exchanger, where the fins are directly connected to a first set of thermoelectric modules. A second set of thermoelectric modules are directly connected to the boundary of the heat exchanger. The first and second sets of thermoelectric modules are configured to convert the thermal energy to electrical energy. By eliminating the metal wall that previously existed between the thermoelectric modules and the fins, the thermoelectric power generator improves the heat transfer between the exhaust gas and the thermoelectric modules, eliminates the thermal fatigue failures at the bond between the metal wall and the thermoelectric modules as well as allows for a higher density of thermoelectric modules.

Heat exchanger for thermoelectric power generation with the thermoelectric modules in direct contact with the heat source

The present invention generally relates to stimuli-responsive drug carriers and methods for making. More specifically, the present invention relates to stimuli-responsive lidded particles that respond to a physiological stimulus and dissolve at a target site inside the body thereby releasing therapeutic agents. The present invention further relates to solid, drug-loaded particles that are made from biodegradable polymers. The present invention further relates to methods for fabricating lidded particles and particles for drug delivery.

Methods for fabricating nano and microparticles for drug delivery

A method and apparatus for measuring dopant profile of a semiconductor is disclosed. Initially, the temperature of a tip of a probe and the temperature of a semiconductor sample are ascertained. Then, a voltage at a location on a surface of the semiconductor sample is obtained via the tip of the probe. The dopant concentration at the location of the surface of the semiconductor sample is subsequently determined by combining the obtained voltage and the temperature difference between the probe tip and the semiconductor sample. The above-mentioned steps can be repeated in order to generate a dopant profile of the semiconductor.

Method and apparatus for measuring dopant profile of a semiconductor

A scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. In other forms, the invention relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

Scanning heat flow probe

In one form of the invention, circuitry having exclusive-OR and latch functionality includes timing circuitry and logic circuitry. The circuitry includes a memory, with first and second memory nodes, for storing a state and its complement, and first and second timing circuitry portions, each operable to receive at least one timing signal, coupled to the respective memory nodes. The logic circuitry includes first and second logic circuitry portions, each of which is operable to receive at least first and second data signals. Each of the logic circuitry portions is coupled in series with a conditionally conductive path of one of the respective first and second timing circuitry portions.

Circuitry having exclusive-OR and latch function, and method therefor

A method of fabricating a scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. The invention also relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

Scanning heat flow probe and the method of fabricating the same

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Austin, TX, United States of America

Li Shi