Taiwan Semiconductor Manufacturing Comp. Ltd.

Li-Sheng Ke

Wen-Ju Preet Yang

Chin-Chang Hsu

Hsien-Hsin Sean Lee

Jian-Yi Li

Jia-Rong Hsu

Chung-Yun Cheng

Hung-Lung Lin

Min-Yuan Tsai

A method including decomposing a conflict graph based on a number of masked to be used to manufacture a semiconductor device. The method further includes determining whether the decomposed conflict graph is a simplified graph based on a comparison between the decomposed conflict graph and a stored conflict graph. The method further includes determining whether the decomposed conflict graph is colorable based on a number of masks used to pattern the layer of the semiconductor device. The method further includes indicating that the conflict graph is colorable in response to a determination that the decomposed conflict graph is colorable.

Method of determining colorability of a semiconductor device and system for implementing the same

A method of determining colorability of a layer of a semiconductor device includes iteratively decomposing a conflict graph to remove all nodes having fewer links than a threshold number of links. The method further includes determining whether the decomposed conflict graph is a simplified graph based on a comparison between the decomposed conflict graph and a stored conflict graph. The method further includes determining whether the decomposed conflict graph is colorable based on a number of masks used to pattern the layer of the semiconductor device. The method further includes flagging violations in response to a determination that the decomposed conflict graph is not colorable.

A method of determining colorability of a layer of a semiconductor device includes iteratively decomposing a conflict graph to remove all nodes having fewer links than a threshold number of links. The method further includes determining whether the decomposed conflict graph is a simplified graph. The method further includes partitioning, using a specific purpose processing device, the decomposed conflict graph if the decomposed conflict graph is not a simplified graph. The method further includes determining whether the decomposed conflict graph is colorable based on a number of masks used to pattern the layer of the semiconductor device if the decomposed conflict graph is a simplified graph. The method further includes flagging violations if the decomposed conflict graph is not colorable.

A method embodiment includes identifying, by a processor, an empty region in an integrated circuit (IC) layout, wherein the empty region is a region not including any active fins. The method further includes providing a standard dummy fin cell and forming an expanded dummy fin cell. The standard dummy fin cell includes a plurality of partitions. The expanded dummy fin cell is larger than the standard dummy fin cell, and the expanded dummy fin cell includes integer multiples of each of the plurality of partitions. The empty region is filled with a plurality of dummy fin cells, wherein the plurality of dummy fin cells includes the expanded dummy fin cell. The plurality of dummy fin cells is implemented in an IC.

Stretch dummy cell insertion in finFET process

Stretch dummy cell insertion in FinFET process

A method embodiment includes identifying an empty region in an integrated circuit (IC) layout, wherein the empty region is a region not including any active fins and outside a minimum spacing boundary, applying a grid map over the empty region, wherein the grid map comprises a plurality of grids inside the empty region, and filling the empty region with a plurality of dummy fin cells by placing a dummy fin cell in each of the plurality of grids, wherein applying the grid map and filling the empty region is performed using a computer.

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Hsinchu, Taiwan

Li-Sheng Ke