Taiwan Semiconductor Manufacturing Comp. Ltd.

Li-Ming Sun

Yu-Lung Yeh

Chien-Chang Huang

Chien Nan Tu

Yi-Ping Pan

Ming-Hsien Wu

Chien-Nan Tu

A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.

Semiconductor image sensing device and manufacturing method thereof

A semiconductor device includes a carrier substrate, a first color filter, a first photodetector, and a light enhancement structure. The first photodetector is disposed between the carrier substrate and the first color filter. The light enhancement structure is disposed between the first color filter and the carrier substrate and adjacent to the first photodetector for enhancing intensity of light incident the first photodetector.

Semiconductor device and manufacturing method thereof

A semiconductor device includes an epitaxial layer including a first surface and a silicon layer disposed on the first surface and including a second surface opposite to the first surface, wherein the silicon layer includes a plurality of pillars on the second surface, a portion of the plurality of pillars on a predetermined portion of the second surface are in substantially same dimension, each of the plurality of pillars on the predetermined portion of the second surface stands substantially orthogonal to the second surface, the plurality of pillars are configured for absorbing an electromagnetic radiation of a predetermined wavelength projected from the epitaxial layer and generating an electrical energy in response to the absorption of the electromagnetic radiation.

Growing community of inventors

Tainan, Taiwan

Li-Ming Sun