Taiwan Semiconductor Manufacturing Comp. Ltd.

Li-min Chen

Meng-Hsien Li

Ming-Hsi Yeh

Kuo-Bin Huang

Neng-Jye Yang

Chieh-Yi Shen

Yu-shan Yeh

Ying-Chuen Wang

Ying-Hsin Hung

A semiconductor structure includes a semiconductor substrate, a dielectric layer, a tungsten plug, a conductive plug, and a contact barrier. The dielectric layer is over a semiconductor substrate. The tungsten plug is in the dielectric layer. The conductive plug is on the tungsten plug. The contact barrier includes a sidewall barrier on a sidewall of the conductive plug and a bottom barrier between the conductive plug and the tungsten plug. A thickness of the sidewall barrier is greater than a thickness of the bottom barrier.

Semiconductor structure and method for forming the same

A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.

Wet etching chemistry and method of forming semiconductor device using the same

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HSINCHU COUNTY, Taiwan

Li-min Chen