Micron Technology Incorporated

Li Li

Zhiqiang (Jeff) Wu

Kunal R Parekh

Yongjun Jeff Hu

Tongbi T Jiang

Pai-Hung Pan

Thomas Arthur Figura

Gary Chen

Richard C Hawthorne

Weimin Li

Kei-Yu Ko

Don L Yates

Max F Hineman

Guy T Blalock

Er-Xuan Ping

Alan R Reinberg

Bradley J Howard

Janos Fucsko

Kin F Ma

Pierre C Fazan

Grady S Waldo

Gurtej S Sandhu

Terry L Gilton

John A Smythe

Kevin J Torek

Donald L Westmoreland

Zhongze Wang

Zhiquiang Wu

Thomas M Graettinger

Whonchee Lee

Jiutao Li

David Y Kao

Shu Qin

Paul J Schuele

Pai Hung Pan

Harlan H Frankamp

Mark E Tuttle

John T Moore

Randhir P Thakur

William Mark Hiatt

Donald L Yates

Kelly T Hurley

Karen T Signorini

Mike Connell

Curtis Hollingshead

Zhiqiang Jeff Wu

Trung Tri Doan

Ronald Allen Weimer

Ross S Dando

Neal R Rueger

Allen P Mardian

Chris W Hill

Richard L Stocks

Kevin T Hamer

Zhigiang (Jeff) Wu

Jonathan C Morgan

Richard C Hawthorne, Deceased

Thomas A Figura

Elvia M Hawthorne

Oxidation methods and resulting structures including providing an oxide layer on a substrate and then reoxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over diffusion regions, such as source and drain regions, in a substrate. The oxide layer may overlie the substrate and is proximate a gate structure on the substrate. The at least one oxidant may be oxygen, water, ozone, or hydrogen peroxide, or a mixture thereof. These oxidation methods provide a low-temperature oxidation process, less oxidation of the sidewalls of conductive layers in the gate structure, and less current leakage to the substrate from the gate structure.

Methods for reoxidizing an oxide and for fabricating semiconductor devices

Methods of implanting dopant ions in a substrate include depositing a sacrificial material on a substrate. Dopant ions are implanted into the substrate while sputtering the sacrificial material, without substantially sputtering the substrate. Substantially no sacrificial material remains on the substrate after the implanting of the dopant ions. Some methods include forming a sacrificial material over a substrate and implanting dopant ions into the substrate while removing substantially all the sacrificial material from the substrate. Substantially no sputtering of the substrate occurs during the implanting of the dopant ions. Methods of doping a substrate include implanting dopant ions into a substrate having a sacrificial material thereon and sputtering the sacrificial material while implanting the dopant ions without substantially sputtering the substrate. Substantially no sacrificial material remains on the substrate after implanting the dopant ions.

Methods of implanting dopant ions

A method for removing a plurality of dielectric materials from a supporting substrate by providing a substrate with a plurality of materials, contacting the substrate at a first temperature with a solution to more quickly remove a first dielectric material than a second dielectric material at the first temperature, and then contacting the substrate at a second temperature with a solution to more quickly remove the second dielectric material than the first dielectric material at the second temperature. Thus, the dielectric materials exhibit different etch rates when etched at the first and second temperatures. The solutions to which the first and second dielectric materials are exposed may contain phosphoric acid. The first dielectric material may be silicon nitride and the second dielectric material may be silicon oxide. Under these conditions, the first temperature may be about 175&#xb0; C., and the second temperature may be about 155&#xb0; C.

Methods for removing dielectric materials

Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane material to a silicon oxide layer.

Low temperature process for polysilazane oxidation/densification

Structures including an at least partially reoxidized oxide material

Methods of implanting dopants into a silicon substrate using a predeposited sacrificial material layer with a defined thickness that is removed by sputtering effect is provided.

Sputtering-less ultra-low energy ion implantation

A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a dielectric layer overlying another dielectric layer, contacting the substrate at a first temperature with an acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with an acid solution exhibiting a positive etch selectivity at the second temperature. The dielectric layers exhibit different etch rates when etched at the first and second temperatures. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175&#xb0; C. and the second temperature may be about 155&#xb0; C.

A method for removing (e.g., etching) different dielectric materials from a semiconductor substrate includes exposing the semiconductor substrate to a solution at temperatures below and at or above a set threshold. Below the threshold temperature, the solution removes one dielectric material (e.g., silicon nitride) faster than it removes another, different dielectric material (e.g., silicon oxide). At or above the threshold temperature, the selectivity of the solution is reversed.

Material removal methods employing solutions with reversible ETCH selectivities

Methods of filling cavities or trenches. More specifically, methods of filling a cavity or trench in a semiconductor layer are provided. The methods include depositing a first dielectric layer into the trench by employing a conformal deposition process. Next, the first dielectric layer is etched to create a recess in the trench within the first dielectric layer. The recesses are then filled with a second dielectric layer by employing a high density plasma deposition process. The techniques may be particularly useful in filling cavities and trenches having narrow widths and/or high aspect ratios.

Methods for filling trenches in a semiconductor material

A method for controlling striations and CD loss in a plasma etching method is disclosed. During the etching process, the substrate of semiconductor material to be etched is exposed first to plasma under a low power strike and subsequently to a conventional high power strike. CD loss has been found to be reduced by about 400 Angstroms and striations formed in the contact holes are reduced.

Method of controlling striations and CD loss in contact oxide etch

This invention includes methods of forming trench isolation. In one implementation, isolation trenches are provided within a semiconductor substrate. A liquid is deposited and solidified within the isolation trenches to form a solidified dielectric within the isolation trenches. The dielectric comprises carbon and silicon, and can be considered as having an elevationally outer portion and an elevationally inner portion within the isolation trenches. At least one of carbon removal from and/or oxidation of the outer portion of the solidified dielectric occurs. After such, the dielectric outer portion is etched selective to and effective to expose the dielectric inner portion. After the etching, dielectric material is deposited over the dielectric inner portion to within the isolation trenches.

Methods of forming trench isolation and methods of forming arrays of FLASH memory cells

Etchants for selectively removing dielectric materials

A two-step via cleaning process that removes metal polymer and oxide polymer residues from a via with substantially no damage to the via or underlying structures on a semiconductor substrate. The via is formed through a dielectric layer and a barrier layer that are disposed over a metal-containing trace disposed on a semiconductor substrate. Sidewalls of the via may be coated with a residue layer including a distinct oxide polymer component and a distinct metal polymer component. The two-step via cleaning process comprises subjecting the residue layer to a nitric acid dip that removes the metal polymer component to expose the oxide polymer component. The oxide polymer component is then subjected to a phosphoric acid dip that removes the oxide polymer component. The oxide polymer and metal polymer residues may also be removed during the fabrication of the via by removing them directly after their respective formations.

Methods for fabricating residue-free contact openings

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Meridian, ID, United States of America

Li Li