International Business Machines Corporation

Li-Kong Wang

Louis L Hsu

Lawrence Alfred Clevenger

Carl John Radens

Kwong Hon Wong

Louis Lu-Chen Hsu

Howard Hao Chen

William Robert Reohr

Jack Allan Mandelman

Tricia Lynn Breen

William R Tonti

Toshiaki Kirihata

Stephen Victor Kosonocky

Wei Hwang

Brian L Ji

Tsorng-Dih Yuan

John E Andersen

Tin-Chee Lo

Daniel Ray Knebel

Terence B Hook

Keith Kwong Hon Wong

Sang Hoo Dhong

John Atkinson Fifield

Philip George Emma

Alejandro Gabriel Schrott

Wayne Frederick Ellis

Robert C Wong

Russell J Houghton

Timothy A Brunner

Matthew R Wordeman

Leathen Shi

Kathryn Wilder Guarini

Gregory J Fredeman

Jeremy K Stephens

William Wu Shen

Louis L C Hsu

Richard Michael Parent

Daniel W Storaska

Dinkar Virendra Singh

James Anthony Misewich

Chorng-Lii Hwang

Philip J Murfet

Keith Kwong-Hon Wong

Fanchieh Yee

Kevin P Guay

Joni C Hsu

Tsomg-Dih Yuan

A number of performance parameters for the electronic system are determined at a particular age of the electronic system. The performance parameters can be correlated to maximum operating frequency of electronic components of the electronic system for the particular age of the electronic system. Operating frequency of the electronic components is adjusted in accordance with the performance parameters. The performance parameters may be predetermined (such as through reliability and burn-in testing), determined during the life of the electronic system, or some combination of these. Performance parameters can comprise prior operating frequencies, hours of operation, ambient temperature, and supply voltage. Performance parameters can comprise performance statistics determined using age-monitoring circuits, where an aged circuit is compared with a circuit enabled only for comparison. Performance statistics may also be determined though error detection circuits. If an error is detected, the operating frequency can be reduced.

Frequency modification techniques that adjust an operating frequency to compensate for aging electronic components

A CMOS receiver system having a tunable receiver having a tunable gain and a bandwidth system is provided. The tunable receiver includes means for receiving input signals; and a control circuit controlled by a control signal for tuning at least one of the gain and the bandwidth of the tunable receiver, wherein the control signal is indicative of a data rate of the input signals. Furthermore, a method is provided for tuning a CMOS receiver receiving input signals. The method includes the steps of receiving at least one control signal, and controlling one of gain and bandwidth of the CMOS receiver in accordance with the at least one control signal, wherein the at least one control signal is indicative of a data rate of the received input signals.

Tunable CMOS receiver apparatus

An integrated circuit is provided having a plurality of data transmitters, including a plurality of default data transmitters for transmitting data from a plurality of data sources and at least one redundancy data transmitter. A plurality of connection elements are provided having a first, low impedance connecting state and having a second, high impedance, disconnecting state. The connection elements are operable to disconnect a failing data transmitter from a corresponding output signal line and to connect the redundancy data transmitter to that output signal line in place of the failing data transmitter. In one preferred form, the connection elements include a fuse and an antifuse. In another form, the connection elements include micro-electromechanical (MEM) switches. The connecting elements preferably present the low impedance connecting state at frequencies which include signal switching frequencies above about 500 MHz.

Redundancy structure and method for high-speed serial link

A content addressable memory ('CAM') system includes a plurality of segments arranged in an array, wherein each of the plurality of segments includes a plurality of CAM cells, each of the plurality of CAM cells includes a wordline, a matchline and a sinkline, the wordline being shared by all of the cells in the same row, the matchline and sinkline being shared by all of the cells in the same segment; and a corresponding method of searching within a CAM system includes providing an input word to the CAM system, comparing a portion of the input word in a segment of the CAM system, and propagating a mismatch to obviate the need for comparison in other segments of the CAM system.

Segmented content addressable memory architecture for improved cycle time and reduced power consumption

A content addressable memory (CAM). A data portion of the CAM array includes word data storage. Each word line includes CAM cells (dynamic or static) in the data portion and a common word match line. An error correction (e.g., parity) portion of the CAM array contains error correction cells for each word line. Error correction cells at each word line are connected to an error correction match line. A match on an error correction match line enables precharging a corresponding data match line. Only data on word lines with a corresponding match on an error correction match line are included in a data compare. Precharge power is required only for a fraction (inversely exponentially proportional to the bit length of error correction employed) of the full array.

Content addressable memory having reduced power consumption

A testing circuit for testing a series of at least three alternating transmitter and receiver links. The testing circuit including a built-in-self-test (BIST.) macro for generating test data and transmitting the test data to a first link of the series of transmitter and receiver links, and for receiving processed test data from a last link of the series of transmitter receiver links; and at least one test transmission line for transmitting test data received by a link of the series of transmitter and receiver links to a next link of the series of transmitter and receiver links, wherein the at least one test transmission line connects the at least three transmitter and receiver links. A method for testing a series of links having at least three alternating transmitter and receiver links of a plurality of transmitter and receiver links in a SerDes core including generating at least one test data signal; transmitting the at least one test data signal sequentially through the transmitter and receiver links of the series of links; receiving the at least one test data signal from a last link of the series of transmitter and receiver links; and checking the at least one test data signal received.

System and method for sequential testing of high speed serial link core

A hybrid substrate, i.e., a substrate fabricated from different materials, and method for fabricating the same are presented. The hybrid substrate is configured for fabricating more than two different devices thereon, has a high thermal conductivity, and is configured for patterning interconnects thereon for interconnecting the different devices fabricated on the hybrid substrate.

Hybrid substrate and method for fabricating the same

A method and structure for an integrated circuit chip has a logic core which includes a plurality of insulating and conducting levels, an exterior conductor level and passive devices having a conductive polymer directly connected to the exterior conductor level. The passive devices contain RF devices which also includes resistor, capacitor, and/or inductor. The resistors can be serpentine resistors and the capacitors can be interdigitated capacitors.

Method to fabricate passive components using conductive polymer

A system level device for battery and integrated circuit chip integration comprises at least one battery; at least one integrated circuit chip powered by the at least one battery; and a package connected to any of the at least one battery and the at least one integrated circuit chip, wherein the at least one battery connects to a pair of opposed upright ends of the package, wherein the at least one integrated circuit chip is disposed between the at least one battery and the package, and wherein the at least one integrated circuit chip lays on top of a portion of the package.

System level device for battery and integrated circuit integration

Thermal cooling structures of diamond or diamond-like materials are provided for conducting heat away from semiconductor devices. A first silicon-on-insulator embodiment comprises a plurality of thermal paths, formed after shallow trench and device fabrication steps are completed, which extend through the buried oxide and provide heat dissipation through to the underlying bulk silicon substrate. The thermal conduction path material is preferably diamond which has high thermal conductivity with low electrical conductivity. A second diamond trench cooling structure, formed after device fabrication has been completed, comprises diamond shallow trenches disposed between the devices and extending through the buried oxide layer. An alternative diamond thermal cooling structure includes a diamond insulation layer deposited over the semiconductor devices in either an SOI or bulk silicon structure. Yet another embodiment comprises diamond sidewalls formed along the device walls in thermal contact with the device junctions to provide heat dissipation through the device junctions to underlying cooling structures. It is also proposed that the foregoing structures, and combinations of the foregoing structures, could be used in conjunction with other known cooling schemes.

Method and structure for providing improved thermal conduction for silicon semiconductor devices

A method and structure for a photodiode array comprising a plurality of photodiode cores, light sensing sidewalls along an exterior of the cores, logic circuitry above the cores, trenches separating the cores, and a transparent material in the trenches is disclosed. With the invention, the sidewalls are perpendicular to the surface of the photodiode that receives incident light. The light sensing sidewalls comprise a junction region that causes electron transfer when struck with light. The sidewalls comprise four vertical sidewalls around each island core. The logic circuitry blocks light from the core so light is primarily only sensed by the sidewalls.

Three-dimensional island pixel photo-sensor

A memory system having a plurality of T-RAM cells arranged in an array is presented where each T-RAM cell has dual vertical devices and is fabricated over a SiC substrate. Each T-RAM cell has a vertical thyristor and a vertical transfer gate. The top surface of each thyristor is coplanar with the top surface of each transfer gate within the T-RAM array to provide a planar cell structure for the T-RAM array. A method is also presented for fabricating the T-RAM array having the vertical thyristors, the vertical transfer gates and the planar cell structure over the SiC substrate.

Memory system capable of operating at high temperatures and method for fabricating the same

An electronically programmable mask for lithography has an array of individually controllable light sources aligned with an array of individually controllable liquid crystals, so that individual pixels may be turned on or off and phase-shifted to provide a desired light intensity distribution on a wafer. The mask may be used in a contact printing mode or in a reduction projection mode.

Hybrid electronic mask

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Montvale, NJ, United States of America

Li-Kong Wang