Newsouth Innovations Pty Limited

Li Hui Song

Stuart Ross Wenham

Brett Jason Hallam

Ly Mai

Alison Maree Wenham

Catherine Emily Chan

Chee Mun Chong

Matthew Bruce Edwards

Pei Hsuan Lu

Phillip George Hamer

Adeline Sugianto

Guang Qi Xu

A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all of the dopant atoms in the doped crystalline silicon region is achieved by introducing hydrogen atoms into the doped 5 crystalline silicon region, whereby the hydrogen coulombicly bonds with some or all of the dopant atoms to deactivate the respective dopant atoms. Deactivated dopant atoms may be reactivated by heating and illuminating the doped crystalline silicon region to break at least some of the dopant-hydrogen bonds while maintaining conditions to create a high concentration of neutral hydrogen atoms whereby 10 some of the hydrogen atoms diffuse from the doped crystalline silicon region without rebinding to the dopant atoms.

High concentration doping in silicon

A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination and heating the lamination to bond the encapsulating material to the device; and iii) cooling the device, where the heating step or cooling step or both are completed under illumination.

Thermal processing in silicon

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Kingsford, Australia

Li Hui Song