Taiwan Semiconductor Manufacturing Comp. Ltd.

Li-Hui Cheng

Szu-Wei Lu

Jing-Cheng Lin

Po-Hao Tsai

Chin-Fu Kao

Chih-Chien Pan

Chih-Hao Chen

Pu Wang

Jui-Pin Hung

Ping-Yin Hsieh

Po-Yuan Cheng

Chih-Yuan Chien

Feng-Cheng Hsu

Porter Chen

An-Jhih Su

Chen-Hua Douglas Yu

Ying-Ching Shih

Tsung-Fu Tsai

Shih-Ting Lin

Hsien-Ju Tsou

Yi-Hang Lin

Wu Sen Chiu

Hung-Yu Chen

Yu-Hsun Wang

Der-Chyang Yeh

Wei-Yu Chen

Li-Hsien Huang

Hsien-Pin Hu

Ming-Shih Yeh

Li-Chung Kuo

Wen-Hsin Wei

Hua-Wei Tseng

Yi-Huan Liao

Jeh-Yin Chang

Yi Chou

Po-hao Tsai

A semiconductor device includes a substrate, a package structure, a thermal interface material (TIM) structure, and a lid structure. The package structure is disposed on the substrate. The TIM structure is disposed on the package structure. The TIM structure includes a metallic TIM layer and a non-metallic TIM layer in contact with the metallic TIM layer, and the non-metallic TIM layer surrounds the metallic TIM layer. The lid structure is disposed on the substrate and the TIM structure.

Semiconductor device and manufacturing method thereof

In an embodiment, a device includes: a package component including an integrated circuit die and conductive connectors connected to the integrated circuit die, the conductive connectors disposed at a front-side of the package component, the integrated circuit die exposed at a back-side of the package component; a heat dissipation layer on the back-side of the package component and on sidewalls of the package component; an adhesive layer on a back-side of the heat dissipation layer, a portion of a sidewall of the heat dissipation layer being free from the adhesive layer; and a package substrate connected to the conductive connectors.

Heat dissipation structures for integrated circuit packages and methods of forming the same

A method of manufacturing a semiconductor device includes following operations. A substrate is received. An electrical conductor is formed over a surface of the substrate. A photo-curable material is selectively dispensed over the surface of the substrate. The photo-curable material is irradiated to form a passivation layer is formed over the surface of the substrate. The passivation layer partially covers an edge of the electrical conductor.

Method of manufacturing semiconductor device including passivation layer

A manufacturing method of a package structure includes: forming a first package component over a temporary carrier, wherein the first package component comprises a semiconductor die encapsulated by an insulating encapsulation material that comprises a base layer and a plurality of fillers inside the base layer; de-bonding the temporary carrier to expose a rear side of the semiconductor die, wherein during the de-bonding, a portion of the fillers is accessibly revealed from the base layer to form an insulating encapsulation; forming a metallic layer on the rear side of the semiconductor die and the portion of the fillers of the insulating encapsulation; and coupling a heat dissipating component to the first package component at least through the metallic layer.

Package structure and manufacturing method thereof

Methods of packaging semiconductor devices and packaged semiconductor devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes coupling through-vias to an insulating material, each of the through-vias having a first width. Dies are also coupled to the insulating material. A portion of the insulating material is removed proximate each of the through-vias. The portion of the insulating material proximate each of the through-vias removed has a second width, the second width being less than the first width.

Methods of packaging semiconductor devices and packaged semiconductor devices

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Adhesive and thermal interface material on a plurality of dies covered by a lid

A method includes bonding a first package and a second package over a package component, adhering a first Thermal Interface Material (TIM) and a second TIM over the first package and the second package, respectively, dispensing an adhesive feature on the package component, and placing a heat sink over and contacting the adhesive feature. The heat sink includes a portion over the first TIM and the second TIM. The adhesive feature is then cured.

Coplanar control for film-type thermal interface

A semiconductor structure includes a first semiconductor package, a second semiconductor package, a heat spreader and an dielectric layer. The first semiconductor package includes a plurality of first semiconductor chips and a first dielectric encapsulation layer disposed around the plurality of the first semiconductor chips. The second semiconductor package is disposed over and corresponds to one of the plurality of first semiconductor chips, wherein the second semiconductor package includes a plurality of second semiconductor chips and a second dielectric encapsulation layer disposed around the plurality of second semiconductor chips. The heat spreader is disposed over and corresponds to another of the plurality of first semiconductor chips. The dielectric layer is disposed over the first semiconductor package and around the second semiconductor package and the heat spreader.

Semiconductor structure and method of forming the same

A semiconductor device and method utilizing a dummy structure in association with a redistribution layer is provided. By providing the dummy structure adjacent to the redistribution layer, damage to the redistribution layer may be reduced from a patterning of an overlying passivation layer, such as by laser drilling. By reducing or eliminating the damage caused by the patterning, a more effective bond to an overlying structure, such as a package, may be achieved.

Dummy structure of stacked and bonded semiconductor device

A semiconductor package includes a first semiconductor die, an adhesive layer, a second semiconductor die, a plurality of conductive pillars and an encapsulant. The adhesive layer is adhered to the first semiconductor die. The second semiconductor die is stacked over the first semiconductor die. The conductive pillars surround the first semiconductor die. The encapsulant encapsulates the first semiconductor die and the conductive pillars, wherein a top surface of the encapsulant is higher than top surfaces of the conductive pillars.

Semiconductor packages

A package structure includes first and second package components, an underfill layer disposed between the first and second package components, and a metallic layer. The first package component includes semiconductor dies, a first insulating encapsulation laterally encapsulating the semiconductor dies, and a redistribution structure underlying first surfaces of the semiconductor dies and the first insulating encapsulation. The second package component underlying the first package component is electrically coupled to the semiconductor dies through the redistribution structure. The underfill layer extends to cover a sidewall of the first package component, the metallic layer overlying second surfaces of the semiconductor dies and the first insulating encapsulation, and a peripheral region of the second surface of the first insulating encapsulation is accessibly exposed by the metallic layer, where the first surfaces are opposite to the second surfaces. A manufacturing method of a package structure is also provided.

Package structure with metallic layer over the surfaces of a plurality of semiconductor dies

A package structure and methods of forming a package structure are provided. The package structure includes a first die, a second die, a wall structure and an encapsulant. The second die is electrically bonded to the first die. The wall structure is located aside the second die and on the first die. The wall structure is in contact with the first die and a hole is defined within the wall structure for accommodating an optical element. The encapsulant laterally encapsulates the second die and the wall structure.

Method of forming package structure and package structure therefrom

A jig for manufacturing a semiconductor package includes a bottom piece and an upper piece. The bottom piece includes a base, a support plate, and at least one elastic connector. The support plate is located in a central region of the base. The at least one elastic connector is interposed between the support plate and the base. The upper piece includes a cap and outer flanges. The cap overlays the support plate when the upper piece is disposed on the bottom piece. The outer flanges are disposed at edges of the cap, connected with the cap. The outer flanges contact the base of the bottom piece when the upper piece is disposed on the bottom piece. The cap includes an opening which is a through hole. When the upper piece is disposed on the bottom piece, a vertical projection of the opening falls entirely on the support plate.

Manufacturing method of semiconductor package using jig

A structure includes a circuit substrate, a device, a metal layer, a lid and a thermal interface material layer. The device is disposed on and electrically connected to the circuit substrate. The device includes at least one semiconductor die laterally encapsulated by an insulating encapsulation. The metal layer is covering a back surface of the at least one semiconductor die and the insulating encapsulation. The lid is disposed on the circuit substrate, and the lid is adhered to the metal layer through the thermal interface material layer.

Method of fabricating package structure

A method for forming a package structure is provided. The method includes bonding a package component to a substrate through a plurality of first connectors. The package component comprises a first semiconductor die and a second semiconductor die. The method also includes forming a dam structure over the substrate and surrounding the first connectors. A top surface of the dam structure is lower than a bottom surface of the package component. The method further includes filling an underfill layer in a space between the dam structure and the first connectors. In addition, the method includes removing the dam structure after the underfill layer is formed.

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Taipei, Taiwan

Li-Hui Cheng