Taiwan Semiconductor Manufacturing Comp. Ltd.

Li-Hsuan Chu

Chin-Szu Lee

Cheng-Yi Wu

Chia-Chun Hung

Hsiang Sheng Liu

Chen Liang Chang

Ching-Wen Wen

Chung-Liang Cheng

Alan Tu

Ethan Hsiao

Hui-Lin Sung

Sz-Yuan Hung

Sheng-Yung Lo

C W Chiu

Hong-Ying Lin

Chih-Wei Hsieh

A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Dielectric film for semiconductor fabrication

A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

Contact structure

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Taichung, Taiwan

Li-Hsuan Chu