United Microelectronics Corp.

Li-Han Chen

Hsin-Fu Huang

Chun-Chieh Chiu

Kuo-Chih Lai

Min-Chuan Tsai

Wei-Chuan Tsai

Chi-Mao Hsu

Pin-Hong Chen

Yen-Tsai Yi

Chia-Chang Hsu

Kuo-Chin Hung

Nien-Ting Ho

Shih-Min Chou

Chia Chang Hsu

Wei-Ming Hsiao

Shu Min Huang

Hsiang-Wen Ke

Jin-Yan Chiou

Szu-Yao Yu

Chung-Yi Chiu

Shu-Min Huang

A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Field effect transistor and fabrication method thereof

A method for forming a thin film resistor with improved thermal stability is disclosed. A substrate having thereon a first dielectric layer is provided. A resistive material layer is deposited on the first dielectric layer. A capping layer is deposited on the resistive material layer. The resistive material layer is then subjected to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a hydrogen or deuterium atmosphere. The capping layer and the resistive material layer are patterned to form a thin film resistor on the first dielectric layer.

Method for forming a thin film resistor with improved thermal stability

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a source/drain region adjacent to two sides of the gate structure; forming an interlayer dielectric (ILD) layer on the gate structure; forming a contact hole in the ILD layer to expose the source/drain region; forming a barrier layer in the contact hole; performing an anneal process; and performing a plasma treatment process to inject nitrogen into the contact hole.

Method for fabricating semiconductor device

A manufacturing method of a connection structure includes the following steps. A dielectric layer is formed on conductive structures. Openings are formed in the dielectric layer and expose the conductive structures. A tungsten nucleation layer is conformally formed on the dielectric layer and in the openings. A nitrogen-containing treatment is performed on the tungsten nucleation layer. A deposition process is performed to form a tungsten filling layer on the tungsten nucleation layer. An interfacial layer is formed between the tungsten nucleation layer and the tungsten filling layer by the deposition process. A fluorine concentration of the interfacial layer is higher than that of the tungsten filling layer. A chemical mechanical polishing (CMP) process is performed to remove a part of the tungsten nucleation layer and a part of the tungsten filling layer for forming connection structures. The interfacial layer is removed by the CMP process.

Manufacturing method of connection structure

A conductive structure includes a substrate including a first dielectric layer formed thereon, at least a first opening formed in the first dielectric layer, a low resistive layer formed in the opening, and a first metal bulk formed on the lower resistive layer in the opening. The first metal bulk directly contacts a surface of the first low resistive layer. The low resistive layer includes a carbonitride of a first metal material, and the first metal bulk includes the first metal material.

Conductive structure and method for manufacturing conductive structure

A manufacturing method of an interconnect structure including the following steps is provided. A dielectric layer is formed on a silicon layer, wherein an opening exposing the silicon layer is in the dielectric layer. A metal layer is formed on the surface of the opening. A stress adjustment layer is formed on the metal layer. A thermal process is performed to react the metal layer with the silicon layer to form a metal silicide layer on the silicon layer. The stress adjustment layer is removed after the thermal process is performed. A barrier layer is formed on the surface of the opening.

Manufacturing method of interconnect structure

A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.

Semiconductor process for forming plug

A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.

Semiconductor process

Semiconductor process and semiconductor device

Semiconductor structure and process for forming plug including layer with pulled back sidewall part

The present invention utilizes a barrier layer in the contact hole to react with an S/D region to form a silicide layer. After forming the silicide layer, a directional deposition process is performed to form a first metal layer primarily on the barrier layer at the bottom of the contact hole, so that very little or even no first metal layer is disposed on the barrier layer at the sidewall of the contact hole. Then, the second metal layer is deposited from bottom to top in the contact hole as the deposition rate of the second metal layer on the barrier layer is slower than the deposition rate of the second metal layer on the first metal layer.

Semiconductor device with a contact plug and method of fabricating the same

A method of forming a contact structure is provided. A silicon-containing substrate is provided with a composite dielectric layer formed thereon. An opening penetrates through the composite dielectric layer and exposes a portion of the source/drain region. A titanium nitride layer is formed in the opening, and the titanium nitride layer is in contact with the exposed portion of the source/drain region. The titanium nitride layer is annealed, so that the bottom portion of the titanium nitride layer is partially transformed into a titanium silicide layer. A conductive layer is formed to fill up the opening.

Growing community of inventors

Tainan, Taiwan

Li-Han Chen