Applied Materials, Inc.

Advanced Micro-fabrication Equipment, Inc. Asia

Li Fu

Shulin Wang

Lee Luo

Xianzhi Tao

Errol C Sanchez

Aihua Chen

Steven Aihua Chen

Sheeba J Panayil

Christopher G Quentin

Gerald Zheyao Yin

Henry Ho

AiHua Chen

Qing Lv

Luo Lee

Zoran Dragojlovic

A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

Gas distribution assembly for use in a semiconductor work piece processing reactor

Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1&#xd7;10atoms/cm.

Method of forming a controlled and uniform lightly phosphorous doped silicon film

A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.

Bi-layer silicon film and method of fabrication

A method for depositing doped polycrystalline or amorphous silicon film. The method includes placing a substrate onto a susceptor. The susceptor includes a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater. The susceptor is located in the process chamber such that the process chamber has a top portion above the susceptor and a bottom portion below the susceptor. The method further includes heating the susceptor. The method further includes providing a process gas mix into the process chamber through a shower head located on the susceptor. The process gas mix includes a silicon source gas, a dopant gas, and a carrier gas. The carrier gas includes nitrogen. The method further includes forming the doped silicon film from the silicon source gas.

Doped silicon deposition process in resistively heated single wafer chamber

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Santa Clara, CA, United States of America

Li Fu