Taiwan Semiconductor Manufacturing Comp. Ltd.

Li-Feng Chu

Chih-Teng Liao

Chen-Wei Pan

Jen-Chih Hsueh

In a method of manufacturing a semiconductor device, a fin structure protruding from an isolation insulating layer disposed over a substrate is formed, a sacrificial gate dielectric layer is formed over the fin structure, a polysilicon layer is formed over the sacrificial gate dielectric layer, a mask pattern is formed over the polysilicon layer, and the polysilicon layer is patterned into a sacrificial gate electrode using the mask pattern as an etching mask. The sacrificial gate electrode has a narrow portion above a level of a top of the fin structure such that a width of the sacrificial gate electrode decreases, takes a local minimum, and then increases from the top of the fin structure.

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Hsinchu, Taiwan

Li-Feng Chu