Siliconware Precision Industries Co., Ltd.

Li-Fang Lin

Bo-Shiang Fang

Chia-Chu Lai

Ho-Chuan Lin

Min-Han Chuang

Hsin-Hung Lee

Ming-Fan Tsai

A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.

Semiconductor substrate and fabrication method thereof

A multi bandwidth balun is provided, including a main signal port, a main inductor electrically connected to the main signal port, a first inductor inducted mutually with the main inductor to constitute a first inductor of a first conversion circuit, a first capacitor module connected in parallel to the first conversion circuit, two first signal ports electrically connected to the first capacitor module, a first main capacitor electrically connected to the first signal port and the first capacitor module therebetween, a second inductor inducted mutually with the main inductor to constitute a second inductor of a second conversion circuit, a second capacitor module connected in parallel to the second conversion circuit, two second signal ports electrically connected to the second capacitor module, and a second main capacitor electrically connected to the second signal port and the second capacitor module therebetween.

Multi bandwidth balun and circuit structure thereof

A cross-coupled bandpass filter includes first, second and third resonators such that a positive mutual inductance is generated between the first and third resonators and mutual inductance generated between the first and second resonators and mutual inductance generated between the second and third resonators have the same polarity, thereby generating a transmission zero in a high frequency rejection band.

Cross-coupled bandpass filter

An interconnecting mechanism is provide, which includes paired first sub-interconnecting mechanisms and paired second sub-interconnecting mechanisms. The first pair of sub-interconnecting mechanisms includes first and second axially symmetrical spiral conductive elements. The second pair of sub-interconnecting mechanisms includes third and fourth axially symmetrical spiral conductive elements. Configuring the pairs of sub-interconnecting mechanisms in a differential transmission structure having a spiral shape is used to avert sounds and noise signals between different chips or substrates caused by a miniaturizing fabrication process or an increased wiring density.

Growing community of inventors

Taichung, Taiwan

Li-Fang Lin