Academia Sinica

National Science Council of Republic of China

National Taiwan University

Li-Chyong Chen

Kuei-Hsien Chen

Dhananjay Manohar Bhusari

Bing-joe Hwang

Yang-Fang Chen

Yian Tai

Chien-Hung Lin

Hong Chun Lo

Chan-Yi Du

Chun-Ku Chen

Chin-Pei Chen

Ying-Sheng Huang

Abhijit Ganguly

Debajyoti Das

Ching-Chun Chang

Ying-Chin Chang

Jian-Ming Chiu

Chia-Wen Hsu

Kuie-Hsien Chen

Hsieh-Cheng Han

Jih Shang Hwang

An electrode structure is provided. The electrode structure includes a substrate, a buffer layer, and a nano-material layer. The buffer layer is disposed on the substrate. The nano-material layer is disposed on the buffer layer, wherein the structure of the nano-material layer is nanowall.

Electrode structure, method of fabricating the same, and lithium battery

The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.

Fluorine-modification process and applications thereof

This invention refers to surface modification/functionalization of Nitride nanomaterials and electrochemistry and optical measurement based upon such functionalized Nitride materials. With this invention a variety of bio-molecules such as DNA, protein, and antigens can be immobilized on the surface for measurement to realize ultra-sensitive chemical- and bio-sensing applications.

Functionalized nitride nanomaterials for electrochemistry and biosensor applications

A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.

Suppressing recombination in an electronic device

Nanotip arrays are formed by exposing a substrate to a process gas mixture that simultaneously forms nanomasks on the substrate surface and etches exposed portions of the substrate surface to form the nanotip array. Components of the process gas mixture form nanocrystallites on the surface of the substrate, thereby masking portions of the substrate from other components of the process gas mixture, which etch exposed portions of the substrate. Accordingly, nanotip arrays formed using this technique can have nanocrytallite endpoints.

Method of forming a nanotip array in a substrate by forming masks on portions of the substrate and etching the unmasked portions

A novel material Si.sub.X C.sub.y N.sub.z, having a crystal structure similar to that of a.Si.sub.3 N.sub.4 with carbon atoms substituting most of the Si sites, is synthesized in crystalline form onto crystalline Si substrates by microwave plasma enhanced decomposition of carbon, silicon and nitrogen containing gasses.

Crystalline Si.sub.x C.sub.y N.sub.z and method for synthesis

The present invention provides a novel crystalline material Si.sub.x C.sub.y N.sub.z possessing a direct optical band gap of 3.8 eV. Many optoelectronic applications, such as blue light emitting diode and laser diode, may utilize this property.

Crystalline Si.sub.x C.sub.y N.sub.z with a direct optical band gap of

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Taipei, Taiwan

Li-Chyong Chen