International Business Machines Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Li-Chung Lee

Richard Hsiao

James Gardner Ryan

Sudipta Kumar Ray

Kamalesh K Srivastava

Erick G Walton

Joseph John Fatula, Jr

Birendra N Agarwala

Paul A Totta

Arthur Bross

Karl J Puttlitz, Sr

Nicholas G Koopman

Aziz M Ahsan

Adolf E Wirsing

Joseph G Schaefer

Carol Yoshiko Inouye

Mark F Chadurjian

Robert Fontana

Charles Chung Lee

Hung-Chin Guthrie

Ullal Vasant Nayak

William L Guthrie

Robert Nolan Payne

Eric James Lee

Hang Fai Ngo

Stephen Arnold Olson

Christopher Ramm

Parul Agrawal

Francisco Agustin Martin

An air bearing burnish slider burnishes very small asperities and cleans the loose particles that adhere to the magnetic recording media. The slider applies a controllable contact force to effectively burnish disk asperities or partially attached particles. In addition, the slider cleans the loose particles effectively while flying in a stable fashion. In a low pitch design, diagonal rails push particles away from the disk surface and trailing edge pads contact the disk at lower linear velocities. Rail pads retain loose contamination and debris in their pockets and burnish asperities. Another design provides a milder burnish force and flies in a high pitch configuration. The trailing edge pads provide stable contacts and the rails help in sweeping away debris. In both designs, the contact forces can be controlled by adjusting linear velocities. A step taper at the leading edge provides a pitch-producing lift force.

Apparatus for burnishing small asperities and cleaning loose particles from magnetic recording media

A method is provided for making a well-defined, highly-predictable chevron type MR sensor for a read head. A first material is selected for a first gap layer. A selected second material is deposited on the first gap layer followed by a resist frame that has elongated openings exposing elongated top portions of the first gap layer that extend at an acute angle to a head surface of the read head. A selected reactive ion etch (RIE) is employed to etch away the exposed portions of the second material layer down to the first material of the first gap layer. The material of the second material layer is chosen to be etched by the RIE while the material of the first gap layer is chosen not to be etched by the RIE. An example is Al O for the first gap layer, SiO for the second material layer and a RIE that is fluorine based. The resist frame is removed leaving elongated strips of the second material layer extending at the aforementioned angle to the head surface. MR material is then sputtered on top of the first gap layer and on the second material strips building up a MR sensor which has a ribbed structure on each of its first and second surfaces. The resultant MR head has second material strips sandwiched between the first gap layer and the MR sensor.

Method of making high definition chevron type MR sensor

A method planarizes a first pole piece layer of a write head by lapping without delaminating the first pole piece layer from an underlying second read gap layer on a wafer substrate. This is accomplished by separating or dicing the first pole piece material layer in a field region about rows and columns of first pole piece layers of magnetic head assemblies so as to reduce the stress of the first pole piece material layer in the field. Accordingly, when the wafer substrate is lapped, such as by chemical mechanical polishing (CMP), a reduced stress prevents the first pole piece material layer from delaminating from the second read gap layer during the lapping operation.

Method of planarizing first pole piece layer of write head by lapping

A method is provided for making a well-defined, highly-predictable chevron type MR sensor for a read head. A first material is selected for a first gap layer. A selected second material is deposited on the first gap layer followed by a resist frame that has elongated openings exposing elongated top portions of the first gap layer that extend at an acute angle to a head surface of the read head. A selected reactive ion etch (RIE) is employed to etch away the exposed portions of the second material layer down to the first material of the first gap layer. The material of the second material layer is chosen to be etched by the RIE while the material of the first gap layer is chosen not to be etched by the RIE. An example is Al.sub.2 O.sub.3 for the first gap layer, SiO.sub.2 for the second material layer and a RIE that is fluorine based. The resist frame is removed leaving elongated strips of the second material layer extending at the aforementioned angle to the head surface. MR material is then sputtered on top of the first gap layer and on the second material strips building up a MR sensor which has a ribbed structure on each of its first and second surfaces. The resultant MR head has second material strips sandwiched between the first gap layer and the MR sensor.

High definition chevron type MR sensor

The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.

Method of forming dual height solder interconnections

Solder mass having conductive encapsulating arrangement

Growing community of inventors

Saratoga, CA, United States of America

Li-Chung Lee