Delta Electronics, Inc.

Lextar Electronics Corporation

Li-Cheng Yang

Jih-Chi Li

Yu-Chun Lee

Yen-I Chou

Wen-Cheng Huang

Tzong-Liang Tsai

Chih-Hao Lin

Shiou-Yi Kuo

Keh-Su Chang

Cheng-Ta Kuo

Ching-Yi Chen

Hung-Chun Tong

Po-Tsun Kuo

Yi-Jyun Chen

Wen-Wan Tai

A wavelength conversion device includes a wavelength conversion plate, a reflective layer, a driving component and a thermal conductive layer. The wavelength conversion plate includes a lateral edge, at least one surface and a conversion region. The reflective layer is disposed on the surface of the wavelength conversion plate. The driving component is disposed near the lateral edge of the wavelength conversion plate and configured to displace the wavelength conversion plate. The thermal conductive layer is disposed on the surface of the wavelength conversion plate and thermally connected to the conversion region for conducting heat generated by the conversion region during a wavelength conversion. By disposing the thermal conductive layer on the surface of the wavelength conversion plate, the thermal conductive layer is thermally directly connected to the conversion region, so that the heat generated at the conversion region during the wavelength conversion is efficiently dissipated.

Wavelength conversion device

A wavelength converting includes a diffused-reflecting layer, a substrate, a photoluminescence layer, and a binder. The diffused-reflecting layer has a first surface and a second surface facing away from each other. The substrate is over the first surface of the diffused-reflecting layer. The photoluminescence layer is over the second surface of the diffused-reflecting layer. The binder is mixed at least in the photoluminescence layer or at least in the diffused-reflecting layer, the binder includes a structural unit represented by formula (1), and a characteristic absorption band in a Fourier-Transform Infrared (FTIR) Spectrum of silicon-oxygen-silicon bonds (Si&#x2014;O&#x2014;Si bonds) in the binder is from 900 cmto 1250 cm, in which R represents an aromatic group.

Wavelength converting device

A wavelength conversion element includes a base plate and a rotating device. The base plate has a first surface and a second surface. The first surface is configured to allow a fluorescent layer to dispose on. The base plate includes some first grooves and some second grooves. The first grooves are disposed on the first surface around a center of the base plate. The second grooves are disposed on the second surface around the center. The first grooves and the second grooves are staggered from each other along a rotating direction. The base plate has some through holes. Each of the through holes communicates with the second surface and the corresponding first groove. The rotating device is connected with the base plate and configured to drive the base plate to rotate about an axis along the rotating direction. The axis passes through the center.

Wavelength conversion element with good effect of heat dissipation

An optical engine module includes a first light source module, a second light source module, and a controller. The first light source module includes a plurality of solid state light emitters. The solid state light emitters are configured to respectively emit different color lights. The second light source module is configured to emit fluorescent light. The controller is configured to: drive the first light source module in a first light emitting mode, in which the color lights are configured to be mixed to produce a first white light; and drive the first light source module and the second light source module in a second light emitting mode, in which the color lights and the fluorescent light are configured to be mixed to produce a second white light.

Optical engine module and projector

A wavelength converting device includes a diffused-reflecting layer, a substrate, and a photoluminescence layer. The diffused-reflecting layer has a first surface and a second surface facing away from the first surface, and the diffused-reflecting layer includes a hydrophilic binder and a lipophilic binder. The substrate is on the first surface of the diffused-reflecting layer. The photoluminescence layer is on the second surface of the diffused-reflecting layer.

A wavelength device includes a substrate, a photoluminescence layer, a light spot adjusting layer, and a reflecting layer. The photoluminescence layer is disposed over the substrate, and is configured to receive incident light and convert the incident light to excitation light. The light spot adjusting layer is disposed between the substrate and the photoluminescence layer, and is configured to receive the excitation light and the unconverted incident light and to adjust the light path of the excitation light and the unconverted incident light, in which a refractive index of the photoluminescence layer is different from a refractive index of the light spot adjusting layer. The reflecting layer is disposed between the light spot adjusting layer, and is configured to reflect the incident light and the excitation light.

A phosphor wheel includes a substrate and a luminescence layer. The luminescence layer is disposed on the substrate and includes a glue layer, a plurality of scattering particles, and a plurality of first photoluminescence particles. The scattering particles and the first photoluminescence particles are collectively distributed in the glue layer. At least one of the scattering particles is located between the substrate and at least one of the first photoluminescence particles, and at least another of the first photoluminescence particles is located between the substrate and at least another of the scattering particles.

Phosphor wheel and light source system using the same

A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

Pixel structure

A phosphor device of an illumination system emitting a first waveband light includes a substrate and a phosphor layer formed on the substrate. The phosphor layer includes a first phosphor agent and a second phosphor agent. The first waveband light is converted into a first color light by the first phosphor agent. The second phosphor agent is distributed over the first phosphor agent and mixed with the first phosphor agent, and the first waveband light is converted into a second color light by the second phosphor agent. The first color light and the second color light are integrated into the second waveband light. The difference between the first wavelength peak of the first color light and the second wavelength peak of the second color light is 50 to 100 nanometers. Therefore, the advantages of increasing the purity, the luminance and the luminous intensity of specific color light are achieved.

Phosphor device comprising plural phosphor agents for converting waveband light into plural color lights with different wavelength peaks

The present disclosure provides a light emitting structure including a blue light source, a first fluorescent material layer and a second fluorescent material layer. The blue light source has a light emitting surface. The first fluorescent material layer covers the light emitting surface of the blue light source. The first fluorescent material layer consists of a first fluorescent material. An excitation band of the first fluorescent material is in a blue wave band, and an emission band of the first fluorescent material is in a green wave band. The second fluorescent material layer covers the first fluorescent material layer. The second fluorescent material layer consists of a second fluorescent material. An excitation band of the second fluorescent material is in a green wave band, and an emission band of the second fluorescent material is in a red wave band. A light device and a backlight module are also provided herein.

Light emitting structure, light device and backlight module

The disclosure provides a heat sink for electrical elements and a light-emitting device containing thereof. The heat sink includes a radiating substrate and at least one hollow radiating channel. In which, the hollow radiating channel is horizontally embedded in the radiating substrate, and has two openings disposed on the same site or the opposite sites of the radiating substrate, so that gas may flow in the hollow radiating channel and remove heat of the radiating substrate. And a light-emitting device containing the heat sink is also provided.

Heat sink for electrical elements and light-emitting device containing thereof

A light-emitting device is provided. The light-emitting device comprises a substrate and a light-emitting element. The substrate comprises a first variable resistor, a second variable resistor, an insulation portion and a carrier. The insulation portion is located between the first variable resistor and the second variable resistor. The carrier is surrounded by the insulation portion, and the light-emitting element is disposed on the carrier. The first variable resistor, the second variable resistor and the insulation portion respectively penetrate the substrate.

Light-emitting device

A LED package structure includes a base portion, a light-emitting chip, a cup portion and an encapsulating glue. The base portion has an upper surface and a lower surface. The upper surface has a die-bonding area. The light-emitting chip emits a light with a first wavelength and is located on the die-bonding area. The cup portion is located on the base portion to surround the die-bonding area to form a recess having an opening. The encapsulating glue is filled into the recess. The encapsulating glue has a wavelength conversion material configured to convert part of the light with the first wavelength into a light with a second wavelength. The cup portion includes an electro chromic layer electrically connected to a first external power and a transmittance of the electro chromic layer is changed in accordance with an input voltage of the first external power to adjust the light-emitting profile of the light-emitting chip.

Growing community of inventors

Taoyuan, Taiwan

Li-Cheng Yang