Taiwan Semiconductor Manufacturing Comp. Ltd.

Li-Chao Yin

Hung-Bin Lin

Chih-Ming Ke

Chyi Shyuan Chern

Hsin-Hsien Wu

Yu-Lung Yang

Ming-Hua Lo

Yuling Chiu

In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.

Method of manufacturing semiconductor devices

A vacuum apparatus includes process chambers, and a transfer chamber coupled to the process chambers. The transfer chamber includes one or more vacuum ports, thorough which a gas inside the transfer chamber is exhausted, and vent ports, from which a vent gas is supplied. The one or more vacuum ports and the vent ports are arranged such that air flows from at least one of the vent ports to the one or more vacuum ports are line-symmetric with respect to a center line of the transfer chamber.

Apparatus for processing substrates or wafers

Growing community of inventors

Hsinchu, Taiwan

Li-Chao Yin