Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Stmicroelectronics (Crolles 2) Sas

Stmicroelectronics (Rousset) Sas

Soitec

S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Léa Di Cioccio

Hubert Moriceau

Fabrice Letertre

Nicolas Posseme

Ivan-Christophe Robin

Bruce Faure

Christophe Morales

Marc Zussy

Maurice Rivoire

Laurent Vandroux

Jean Berthier

Pierric Gueguen

Séverine Cheramy

Jean-Sébastien Moulet

Philippe Regreny

Marion Migette

Elsa Hugonnard-Bruyere

Damien Bordel

Loïc Sanchez

Yann Beilliard

Floriane Baudin

Sébastien Mermoz

Jean-Pierre Nieto

Chiara Sabbione

Geneviève Grenet

The invention concerns a support intended for the implementation of a method of self-assembly of at least one element on a surface of the support, including at least one assembly pad on said surface, a liquid drop having a static angle of contact on the assembly pad smaller than or equal to 15&#xb0;, and nanometer- or micrometer-range pillars on said surface around the pad, the liquid drop having a static angle of contact on the pillars greater than or equal to 150&#xb0;.

Process for manufacturing assembly pads on a carrier for the self-assembly of an electronic circuit on the carrier

A method for bonding a first surface provided with at least one copper area surrounded by a silicon oxide area to a second surface includes an operation of treatment of the first surface by a plasma, before placing the first surface in contact with the second surface. The plasma is formed from a gas source containing a silicon oxide nitriding agent and a copper oxide reducing agent containing hydrogen. The gas source may include an Nand NHand/or Hgas mixture or a NO and Hgas mixture, or ammonia, which is then used both as a nitriding agent and as a reducing agent. The plasma obtained from this gas source then necessarily contains nitrogen and hydrogen, which enables, in a single operation, to provide a high-performance bonding between the first and second surfaces.

Treatment, before the bonding of a mixed Cu-oxide surface, by a plasma containing nitrogen and hydrogen

Method including the steps of a) Providing a first stack including a first substrate on which is deposited a first metal layer including a first metal, and a first solubilization layer distinct from the first metal layer, the first solubilization layer including a first getter material configured to solubilize the oxygen, b) Providing a second stack including a second substrate on which is deposited a second metal layer including a second metal, c) Contacting the first metal layer and the second metal layer so as to obtain a direct metal bonding between the first metal layer and the second metal layer, and d) Applying a heat treatment for annealing the bonding.

Direct metal bonding method

A method for producing at least one pad assembly () on a support () for use in a method for self-assembling at least one element () on the support (), comprises fanning, on the support (), a layer () of at least one fluorinated material around the location () of the pad assembly (), the layer () having a thickness greater than 10 nm. The layer () and the location () are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly () at said location (), wherein a drop of liquid () having a static contact angle on the pad assembly () less than or equal to 15&#xb0;, after the exposure to the ultraviolet treatment, has a static contact angle on the layer () greater than or equal to 100&#xb0;.

Method for producing at least one pad assembly on a support for the self-assembly of an integrated circuit chip on the support by the formation of a fluorinated material surrounding the pad and exposure of the pad and the fluorinated material to an ultraviolet treatment in the presence of ozone

To avoid problems of hydrolysis of the silicon oxide formed by PECVD at the surface of at least one wafer, it is proposed to cover, in the vacuum deposition chamber used to deposit the silicon oxide, said oxide with a temporary protective layer containing nitrogen. The protective layer thus protects the silicon oxide against the outer environment and especially against humidity when the wafer provided with the silicon oxide is stored outside of the vacuum deposition chamber. Afterwards, the protective layer is removed, for example, by chemical-mechanical. polishing, just before the two wafers are placed into contact. The protective layer may be formed by a PECVD silicon nitride deposition, by plasma nitriding or nitrogen doping of a superficial portion of the silicon oxide.

Method for directly adhering two plates together, including a step of forming a temporary protective nitrogen

A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance.

Method and device for separating a structure

A method for transferring a layer onto a support includes transferring the layer, assembled on an initial substrate, onto a liquid layer that has been previously deposited on the support. The layer is subsequently released from the initial substrate by chemical etching, and the liquid layer is evacuated to allow molecular adhesion of the layer to the support.

Method of transferring a layer onto a liquid material

A method for transferring a thin layer from an initial substrate includes forming an assembly of the initial substrate with one face of a silicone type polymer layer, this face having been treated under an ultraviolet radiation, and processing the initial substrate to form the thin layer on the silicone type polymer layer.

Method for transfer of a thin layer

Growing community of inventors

Saint Ismier, France

Léa Di Cioccio