Bell Telephone Laboratories

Western Electric Company, Inc.

Lewis Emanuel Katz

Bernard L Morris

Robert J Lavigna

Raymond E Reusser

William Charles Erdman, Deceased

David W Hill

Carl Lewis Paulnack

Jorge Agraz-Guerena

A process for making dielectrically isolated silicon integrated circuits which use silicon oxide filled trenches to provide isolation is described. To minimize damage to the silicon, the trenches are filled by sequentially annealed oxidation process which involves alternately growing some oxide and then annealing to relieve stresses before growing more oxide.

Sequentially annealed oxidation of silicon to fill trenches with silicon

In Czochralski crystal growing operations, particularly those involving growth of silicon crystals, projecting formations of silicon monoxide sometimes form on the surface of the melt-containing crucible just above the initial level of the melt. These formations are avoided by perturbing chemical formation conditions at the region of probable formation. Such perturbations may be provided by a tube through which either a positive pressure of a gas, such as argon, is directed toward the region of probable formation or through which a negative pressure may be applied to perturb the formation conditions.

Method and apparatus for avoiding undesirable deposits in crystal

A method is described for growing epitaxial layers of material on monocrystalline substrates, chiefly silicon, which are substantially free of slip dislocations. The method involves placing an encircling ring of inert, heat resistant material around the rim of the substrate and over the peripheral surface of the substrate to suppress radiation from the peripheral portion of the wafer. The generation of slip dislocations is inhibited because heat is more uniformly distributed throughout the wafer.

Formation of epitaxial layers on substrate wafers utilizing an inert

A method for removing projections from the surface of epitaxially-deposited semiconductor layers is described. These projections can adversely affect the results of photolithographic processing. The method comprises forming an oxide layer on the surface and mechanically fracturing the oxide-coated projections. In the ensuing step anisotropic semiconductor etchants are applied to the surface to remove the projections selectively.

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Allentown, PA, United States of America

Lewis Emanuel Katz