Redfern Integrated Optics, Inc.

Optasense Inc.

Lew Stolpner

Mazin Alalusi

Vladimir Kupershmidt

Steve Yiqiang Li

Radu M Barsan

Peter Mols

The present disclosure describes semiconductor external cavity laser with wide bandwidth frequency modulation capabilities. The laser is preferably packaged in a standard form-factor package, such as a 14-pin butterfly package. The front end of the cavity comprises an integrated planar circuit (e.g., silica-on-silicon planar lightwave circuit with Bragg gratings), and the 'back facet' of the laser is implemented as a high-reflection (HR) coated LiNbOphase tuning section in the double pass configuration. AC-voltage signal applied to the electrodes of phase tuning section modulates a refractive index of the propagating TE-polarization mode of external cavity and produces frequency modulation. Such frequency modulation is not associated with any thermal behavior of the gain element included in the external cavity laser, and has a negligible phase delay over a wide bandwidth.

Semiconductor external cavity laser with integrated planar waveguide bragg grating and wide-bandwidth frequency modulation

The present invention relates to various methods of fabricating Planar Bragg Gratings (PBG) in a doped waveguide in a Planar Lightwave Circuit (PLC) device, suppressing unwanted parasitic grating effects during fabrication of the device. One approach to reduce parasitic gratings is to use a hard mask before the waveguide photolithography and etch, that results in a steeper sidewall angle that reduces or eliminates the parasitic grating effect. Another method of reducing parasitic grating effect is to deposit a layer of developable Bottom Anti Reflective Coating (BARC) prior to depositing the photo resist for waveguide etch. A third method of resisting parasitic gratings comprises using a planarizing undoped silica layer as a barrier layer on top of the core. During subsequent high temperature annealing germanium outdiffuses laterally into the cladding. The net effect is an optical waveguide with improved lateral uniformity because germanium diffusion smoothes out the sidewall roughness created during the waveguide reactive ion etch process. The undoped silica (SiO2) layer on top of the grating also serves the purpose of significantly reducing germanium outdiffusion from the core in the upward direction.

Device fabrication with planar bragg gratings suppressing parasitic effects

The present invention relates to external cavity laser (ECL) apparatuses and manufacturing processes, and more particularly to implementing low noise narrow bandwidth ECLs on planar lightwave circuit (PLC) platforms for harnessing high-performance, high-stability operation from a compact-footprint, low-power packaged device. An ECL device with narrow linewidth and low noise is disclosed, the device comprising a PLC device and a gain chip butt-coupled to each other. The PLC device has a planar Bragg grating (PBG) integrated onto a rectangular waveguide. The PLC device has anti-reflection coatings (ARC) on its input facet and output facet. The waveguide is designed to be selective of a single polarization. The gain chip has high-reflection coating (HRC) on a back facet and an ARC on a front facet. An operating wavelength of the ECL is aligned to a longer wavelength red slope of a reflectivity spectrum of the PBG. The operating wavelength may be tuned thermally, electrically, or thermo-electrically.

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Mt. View, CA, United States of America

Lew Stolpner