Siltronic Ag

Leszek Mistur

Klaus Roettger

Alexander Heilmaier

Vladimir Dutschke

Torsten Olbrich

Makoto Tabata

Andreas Muehe

Johannes Staudhammer

Markus Schnappauf

Rainer Baumann

Herbert Becker

Klaus Röttger

Andreas MÜHE

A method dresses one polishing cloth or two polishing pads simultaneously, in which a polishing cloth has been applied to a polishing plate, with at least one dresser (), which is equipped with at least one dressing element (), this at least one dressing element () being in contact with the at least one polishing cloth () to be dressed, wherein the at least one polishing plate () is rotated with a relative rotational speed and the at least one dresser () is rotated with a relative rotational speed and at least two different combinations of directions of rotation of the two pairs of polishing plates () and pin wheels () are executed during the simultaneous dressing of two polishing pads () or during the dressing of one polishing cloth () of the polishing plate () and of the at least one dresser ().

Method for dressing polishing pads

A monocrystalline semiconductor wafers have an average roughness Rof at most 0.8 nm at a limiting wavelength of 250 &#x3bc;m, and an ESFQRof 8 nm or less given an edge exclusion of 1 mm. The wafers are advantageously produced by a method comprising the following steps in the indicated order:

Monocrystalline semiconductor wafer and method for producing a semiconductor wafer

A method for polishing at least one wafer composed of semiconductor material that has a front side and the rear side includes performing at least one first polishing step including simultaneously polishing both front and rear sides of the at least one wafer at a process temperature between an upper polishing plate and a lower polishing plate. Each of the upper polishing and lower polishing plates is covered with a polishing pad having an inner edge and an outer edge, a hardness of at least 80&#xb0; Shore A, a compressibility of less than 2.5%, and respective upper and lower surfaces that come into contact with the wafer being polished. The upper and lower surfaces form a polishing gap extending from the inner edge to the outer edge. A height of the polishing gap at the inner edge differs linearly from the height of the polishing gap at the outer edge.

Method for polishing a semiconductor wafer

A method of polishing a semiconductor wafer includes simultaneous double-side polishing the wafer in a gap of a polishing device between a lower polishing plate covered with a lower polishing pad and upper polishing plate covered with an upper polishing pad while supplying a polishing agent. A first of the upper and lower polishing pads is dressed using a dressing tool. The dressing tool is mounted in the gap so that it extends from the inner edge to the outer edge of the first polishing pad. The distance between the dressing tool and a second of the upper and lower polishing pads at the inner edge of the second polishing pad differs from a corresponding distance at the outer edge of the second polishing pad. After the dressing, the at least one semiconductor wafer in the gap is polished.

Method for polishing semiconductor wafers by means of simultaneous double-side polishing

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Burghausen, Germany

Leszek Mistur