Intel Corporation

Portland State University

Lester Lampert

Ravi Pillarisetty

Hubert C George

James S Clarke

Jeanette M Roberts

Nicole K Thomas

David J Michalak

Roman Caudillo

Zachary R Yoscovits

Kanwaljit Singh

Thomas Francis Watson

Stephanie A Bojarski

Adel A Elsherbini

Payam Amin

Stefano Pellerano

Jessica M Torres

Florian Luethi

Willy Rachmady

Roza Kotlyar

Sarah Atanasov

Felix Frederic Leonhard Borjans

Simon Schaal

Marko Radosavljevic

Sansaptak W Dasgupta

Patrick H Keys

Brennen Karl Mueller

Javier A Falcon

Justin Hogaboam

Anne Y Matsuura

Jong Seok Park

Shavindra Premaratne

Sushil Subramanian

JongSeok Park

Eric M Henry

Haiyan Li

Albert Schmitz

Samuel Frederick Neyens

Guoji Zheng

Florian Luthi

Disclosed herein are quantum dot devices with conductive liners, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include a first insulator material over the quantum well layer, wherein the first insulator material includes an opening (e.g., a trench); a gate metal on the first insulator material and extending into the opening; a conductive material proximate to the opening, between the quantum well layer and the first insulator material; and a second insulator material between the conductive material and the opening.

Trench-based quantum dot devices with conductive liners

Technologies for radiofrequency optimized interconnects for a quantum processor are disclosed. In the illustrative embodiment, signals are carried in coplanar waveguides on a surface of a quantum processor die. A ground ring surrounds the signals and is connected to the ground conductors of each coplanar waveguide. Wire bonds connect the ground ring to a ground of a circuit board. The wire bonds provide both an electrical connection from the quantum processor die to the circuit board as well as increased thermal coupling between the quantum processor die and the circuit board, increasing cooling of the quantum processor die.

Technologies for radio frequency optimized interconnects for a quantum processor

An array of spin qubits relies on a gradient magnetic field to ensure that the qubits are separated in frequency in order to be individually addressable. Furthermore, a strong magnetic field gradient is required to electrically drive the EDSR of the qubits. Quantum dot devices and related methods and systems that integrate magnetic materials in the gates to provide a gradient magnetic field are disclosed. Magnetic materials in different gates may be of different heights to improve frequency separation of neighboring qubits. Unlike previous approaches to quantum dot formation and manipulation, various embodiments of the quantum dot devices disclosed herein may enable improved control over magnetic fields and their gradients to realize better frequency targeting of individual qubits, help minimize adverse effects of charge noise on qubit decoherence and provide good scalability in the number of quantum dots included in the device.

Quantum dot devices with magnetic gates

An array of quantum dot qubits (e.g., an array of spin qubits) relies on a gradient magnetic field to ensure that the qubits are separated in frequency in order to be individually addressable. Furthermore, a strong magnetic field gradient is required to electrically drive the electric dipole spin resonance (EDSR) of the qubits. Quantum dot devices disclosed herein use microcoil arrangements for providing a gradient magnetic field, the microcoil arrangements integrated on the same chip (e.g., on the same die or wafer) as quantum dot qubits themselves. Unlike previous approaches to quantum dot formation and manipulation, various embodiments of the quantum dot devices disclosed herein may enable improved control over magnetic fields and their gradients to realize better frequency targeting of individual qubits, help minimize adverse effects of charge noise on qubit decoherence and provide good scalability in the number of quantum dots included in the device.

Quantum dot based qubit devices with on-chip microcoil arrangements

Embodiments of the present disclosure describe quantum circuit assemblies that include one or more filter modules integrated in a package with a quantum circuit component having at least one qubit device. Integration may be such that both the quantum circuit component and the filter module(s) are at least partially inside a chamber formed by a radiation shield structure that is configured to attenuate electromagnetic radiation incident on the quantum circuit component and the filter module(s). Placing filter modules under the protection provided by the radiation shield structure may boost coherence of the qubits. Some example filter modules may include filter(s) configured to convert electromagnetic radiation to heat and filter(s) configured to perform bandpass filtering. Modular blocks of in-line filters inside the shielded environment may allow to route signals to the quantum circuit component with reduced noise and speed up installation of a complete quantum computer.

Stackable in-line filter modules for quantum computing

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric, and the first gate is at least partially between a portion of the second gate and the quantum well stack.

Quantum dot devices with overlapping gates

Quantum dot devices with three of more accumulation gates provided over a single row of a quantum dot formation region are disclosed. Each accumulation gate is electrically coupled to a respective doped region. In this manner, multiple single electron transistors (SETs) are provided along the row. Side and/or center screening gates may be used to apply microwave pulses for qubit control and to control electrostatics so that source and drain regions of the multiple SETs with quantum dots formed along the single row of a quantum dot formation region are sufficiently isolated from one another. Such quantum dot devices provide strong spatial localization of the quantum dots, good control over quantum dot interactions and manipulation, good scalability in the number of quantum dots included in the device, and/or design flexibility in making electrical connections to the quantum dot devices to integrate the quantum dot devices in larger computing devices.

Quantum dot devices with side and center screening gates

Apparatus and method for measurement-free (MF) quantum error correction (QEC). For example, one embodiment of a method comprises: determining an error syndrome on a first subset of ancilla qubits of a quantum processor; decoding the error syndrome to produce decoded results on a second subset of ancilla qubits of the quantum processor; applying the decoded results to one or more system qubits; and unconditionally resetting the first subset and/or second subset of ancilla qubits to remove entropy and/or noise from the quantum system, wherein the operations of determining the error syndrome, decoding the error syndrome, applying the error syndrome, and unconditionally resetting the first and/or second subset of ancilla qubits are performed responsive to a qubit controller executing quantum control instructions provided from or derived from a script and without transmitting measurement data related to the error syndrome to a non-quantum computing device.

Apparatus and method for quantum error correction without measurement or active feedback

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate and an adjacent second gate above the quantum well stack; and a gate wall between the first gate and the second gate, wherein the gate wall includes a spacer and a capping material, the spacer has a top and a bottom, the bottom of the spacer is between the top of the spacer and the quantum well stack, and the capping material is proximate to the top of the spacer.

Gate walls for quantum dot devices

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.

Quantum well stacks for quantum dot devices

Disclosed herein are quantum dot devices with multiple layers of gate metal, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; an insulating material above the quantum well stack, wherein the insulating material includes a trench; and a gate on the insulating material and extending into the trench, wherein the gate includes a first gate metal in the trench and a second gate metal above the first gate metal.

Quantum dot devices with multiple layers of gate metal

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack and a plurality of linear arrays of gates above the quantum well stack to control quantum dot formation in the quantum well stack. An insulating material may be between a first linear array of gates and a second linear array of gates, the insulating material may be between individual gates in the first linear array of gates, and gate metal of the first linear array of gates may extend over the insulating material.

Quantum dot devices

Disclosed herein are quantum dot devices with conductive liners, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include a base, a first fin extending from the base, a second fin extending from the base, a conductive material between the first fin and the second fin, and a dielectric material between the conductive material and the first fin.

Quantum dot devices with conductive liners

A quantum dot device is disclosed that includes a quantum well stack, a first and a second plunger gates above the quantum well stack, and a passive barrier element provided in a portion of the quantum well stack between the first and the second plunger gates. The passive barrier element may serve as means for localizing charge in the quantum dot device and may be used to replace charge localization control by means of a barrier gate. In general, a quantum dot device with a plurality of plunger gates provided over a given quantum well stack may include a respective passive barrier element between any, or all, of adjacent plunger gates in the manner as described for the first and second plunger gates.

Quantum dot devices with passive barrier elements in a quantum well stack between metal gates

A quantum dot device is disclosed that includes a fin and a gate above the fin. The fin may extend away from a base and include a quantum well stack in which one or more quantum dots may be formed during operation of the quantum dot device. The gate may include a gate electrode material having a first portion and a second portion, where the first portion is above the quantum well stack and the second portion is a portion that is not above the quantum well stack and is separated from the base by an insulating material. The quantum dot device may further include a metal structure between the second portion of the gate electrode material and the base, forming a portion of a diode provided in series with the gate, which diode may provide at least some ESD protection for the quantum dot device.

Growing community of inventors

Portland, OR, United States of America

Lester Lampert