Hewlett-packard Development Company, L.p.

Leslie Louis Szepesi, Jr

Alexander N Govyadinov

Eric T Martin

James Richard Przybyla

Zhizhang Chen

Heon Lee

Arthur Piehl

Mark Hunter

Hang Liao

Matthew J Gelhaus

A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.

Storage device with charge trapping structure and methods

A charge control circuit for controlling a micro-electromechanical system (MEMS) device having variable capacitor formed by first conductive plate and a second conductive plate separated by a variable gap distance. The charge control circuit comprises a switch circuit configured to receive a reference voltage having a selected voltage level and configured to respond to an enable signal having a duration at least as long as an electrical time constant constant of the MEMS device, but shorter than a mechanical time constant of the MEMS device, to apply the selected voltage level across the first and second plates for the duration to thereby cause a stored charge having a desired magnitude to accumulate on the variable capacitor, wherein the variable gap distance is a function of the magnitude of the stored charge.

Charge control of micro-electromechanical device

Growing community of inventors

Salem, OR, United States of America

Leslie Louis Szepesi, Jr