Memc Electronic Materials, Inc.

Leslie G Stanton

Philip R Schmidt

Yoshio Iwamoto

James C Lenk

Craig Spohr

Kenneth Krause

A method for calibrating a semiconductor wafer drying apparatus including a heater and a vessel containing a solvent and capable of receiving semiconductor wafers comprises selecting a test heater temperature and a test processing time. A first set of wafers is placed in the vessel and the heater is operated at the test heater temperature so that a solvent vapor cloud is created in the vessel. The first set of wafers is monitored for substantial envelopment by the vapor cloud during the test processing time. Based on the monitoring step, at least one of the test heater temperature and the test processing time is adjusted to establish at least one operating parameter of an operating heater temperature parameter and an operating processing time parameter for processing successive sets of wafers so as to promote substantial vapor cloud envelopment of each set of wafers dried in the drying apparatus.

Method of calibrating a semiconductor wafer drying apparatus

Apparatus and method for the inspection of the edges of multiple semiconductor wafers at the same time. The wafers are held in a cassette and a columnar beam of light is projected tangentially to an upper edge portion of the wafers. Visual detection of back scattering of light from the edge of any of the wafers reveals the edge defect. Rotation of the wafers using the apparatus permits the entire circumference of the wafers to be inspected. The apparatus holds the wafers in such a way as to protect their polished surfaces during the inspection process.

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O'Fallon, MO, United States of America

Leslie G Stanton