Endevco Corporation

Becton Dickinson and Company Limited

Meggitt (San Juan Capistrano), Inc.

Becton, Dickinson Electronics Company

Allied Corporation

Meggitt (Orange County), Inc.

Meggitt Ltd.

Leslie Bruce Wilner

Tom Kwa

James Tjan-Meng Suminto

Joseph S Fragala

Andrew J Meyer

A pressure sensitive element is provided. In one embodiment the pressure sensitive element comprises: a diaphragm with a gage side and a back side and a rim surrounding the diaphragm; a pair of inner islands on the gage side of the diaphragm wherein the pair of inner islands are spaced to form a first gap between the pair of inner islands; a first freed gage spanning the first gap; at least one bridge to provide an electrical communication path between the rim and the first freed gage; an outer island on the gage side of the diaphragm wherein the outer island and the rim are spaced to form a second gap; and a second freed gage spanning the second gap.

Microelectromechanical pressure sensors

A new high G-range damped acceleration sensor is proposed with a proof mass optimized for maximized, bi-directional and symmetrical damping to accommodate acceleration ranges above and beyond several thousand G's. In order to achieve the maximum, bi-directional and symmetrical damping, the high G-range acceleration sensor is designed to have minimum amount of mass in the proof mass while maximizing its surface areas. Such high G-range damped acceleration sensor can be applied to any application in which damping (or suppression of ringing) is desired at quite high frequencies.

Proof mass for maximized, bi-directional and symmetric damping in high g-range acceleration sensors

A pressure transducer is provided that has a transducer body with a rim, a diaphragm that deflects in response to pressure and a sensor bonded to the diaphragm at the rim and at a center of the diaphragm. The sensor detects deflection of the metal diaphragm. The sensor and diaphragm are made of different materials. A thermal expansion difference between the sensor and the diaphragm is accommodated by flexures in the sensor that accept relative motion in a radial direction of the metal diaphragm with little effect on a sensitivity of the silicon structure to motion in an axial direction of the diaphragm.

Silicon sensing structure to detect through-plane motion in a plane of material with thermal expansion substantially different from that of silicon

An interconnection system is provided for a solid-state device. The solid-state that includes, a first layer, multiple devices and a first face. A second layer is bonded to the first face at a bonded face of the second layer that faces the first face. Electrically conductive bonds are between the first and second faces. Conductive paths are on the bonded face of the second layer and connect two or more of the conductive bonds.

Interconnection system on a plane adjacent to a solid-state device structure

A mechanical-to-electrical sensing structure is provided with first and second movable blocks. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. At least a first gage link is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gage link. Electrochemistry is used to define the at least first gage.

Highly sensitive piezoresistive element

A pivoted acceleration sensor has a substrate that is substantially parallel to first and second surfaces. A reference frame is provided. A first unbalanced seismic mass is suspended within the reference frame and is coupled with the reference frame through first and second strain gauges. The first and second strain gauges are located along a pivot axis of the first unbalanced seismic mass. The first and second strain gauges are first and second piezoresistors on the first surface of the substrate, A second unbalanced seismic mass is flexibly coupled with the first unbalanced seismic mass. The second unbalanced seismic mass is suspended within the reference frame and is coupled with the reference frame through third and fourth strain gauges. The third and fourth strain gauges are located along a pivot axis of the second unbalanced seismic mass. The third and fourth strain gauges are third and fourth piezoresistors on the first surface of the substrate. Metallization on the first surface of the substrate is configured to connect the first, second, third and fourth piezoresistors in a bridge configuration without crossovers.

Coupled pivoted acceleration sensors

A micro-sensor is provided with a fixed reference frame and an elastic pivot. The elastic pivot has at least two co-axial segments of pivot and is coupled to the fixed reference frame. The elastic pivot has a neutral axis that is a central line of the pivot. A moveable body is coupled to the elastic pivot and the reference frame. The moveable body and the reference frame share a reference surface. The moveable body extends between the two co-axial segments to provide that for a rotation of the moveable body about the pivot the moveable body approaches the reference surface at a first side, and recedes from the reference surface from an opposite side to provide an opening gap and a closing gap. The neutral axis is below the reference surface. At least a first gauge is configured to detect tilt about the elastic pivot and measure separation of the moveable body and the reference frame at the reference surface. The gauge provides a measurement of the opening and closing of the opening and closing gaps. Inputs to be measured cause the moveable body to rotate about the pivot and strain the gauge.

Flexural pivot for micro-sensors

A mechanical-to-electrical sensing structure has first and second movable blocks formed in a handle layer. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. The first hinge is formed in the handle layer. A first gauge is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gauge. The first gauge is formed from a device layer with an oxide between the device and handle layers. The sensing structure is made from an SOI wafer, and the first gauge is protected during an etching away of handle material beneath the first gauge by an oxide between the device and handle layers and an etch-resistant oxide or nitride on exterior surfaces of the first gauge.

A piezoresistive device is provided for sensing mechanical input and converts mechanical movement of at least two relatively movable parts into an electrical output. A silicon substrate is provided that is oriented in the (100) plane and has an n-type impurity. A gap extends across a portion of the substrate. The gap defines the at least two relatively moveable parts. A flexible cross-section connects the at least two relatively moveable parts. The cross-section is made of the same material as the substrate. At least one strain sensitive element is provided on a surface of the silicon substrate, is aligned in a [110] direction and includes a p-type impurity. The strain sensitive element has two end portions interconnected by an intermediate neck portion. The neck portion is supported on a structure that concentrates strain. The structure extends across the gap and has vertical walls that extend to the cross-section in the gap. The structure is made of the same material as the substrate. At least one electrode is electrically connected to the end portions. The at least one electrode detects changes in electrical resistance between the end portions when the neck portion is subjected to stress in a direction of a current through the strain sensitive element that results from the relative movement of the at least two relatively moveable parts.

Piezoresistive strain concentrator

A process for forming a junction-isolated, electrically conductive via in a silicon substrate and a conductive apparatus to carry electrical signal from one side of a silicon wafer to the other side are provided. The conductive via is junction-isolated from the bulk of the silicon substrate by diffusing the via with a dopant that is different than the material of the silicon substrate. Several of the junction-isolated vias can be formed in a silicon substrate and the silicon wafer coupled to a second silicon substrate of a device that requires electrical connection. This process for forming junction-isolated, conductive vias is simpler than methods of forming metallized vias, especially for electrical devices more tolerant of both resistance and capacitance.

Junction-isolated vias

A piezoresistive device senses mechanical input and converts mechanical movement of at least two relatively movable parts into an electrical output. An SOI substrate is provided. A gap extends across a portion of the substrate. The gap defines the at least two relatively moveable parts and a flexible cross-section that connects the at least two relatively moveable parts. The cross-section is made of a same material as the substrate. At least one strain sensitive element is at a surface of the substrate. The at least one strain sensitive element has two end portions interconnected by an intermediate neck portion. The neck portion is supported on a structure that concentrates strain. The structure extends across the gap and has vertical walls extending to the cross-section in the gap. The structure is made of the same material as the substrate. At least one electrode is electrically connected to the end portions and is configured to detect changes in an electrical resistance between the end portions created when the neck portion is subjected to stress in a direction of a current through the at least one strain sensitive element that results from a relative movement of the at least two relatively moveable parts.

A piezoresistive strain concentrator that converts mechanical movement into electrical output and a process for fabricating the concentrator are provided. The device includes a strain sensing structure composed of a piezoresistive strain sensitive element that spans a gap in a substrate. The strain sensing structure is supported on a strain concentrating structure also spanning the gap that has vertical walls extending to a cross-section at the base of the gap, both structures being etched from the substrate. The structure of the strain-concentrating support for the strain sensitive element is fabricated by deep reactive ion etch (DRIE). The strain sensing structure has an increased sensitivity, a low gage factor and an increased resistance to buckling and fracture compared to previous strain gage structures. Several of the strain sensing structures can be connected in a sequence in a bridge circuit.

A radiation sensor which includes a thermopile for detecting radiant energy. The thermopile and a support rim for the thermopile are fabricated as an integrated unit to form a support chip. The support chip is mated to a mating chip so that the thermopile is positioned in an inner cavity region of the radiation sensor. The sensor has a window which permits the transmission of radiant energy into the enclosure such that the radiant energy impinges upon a central absorber region of the thermopile.

Thermal radiation sensor

A multi-layer device with a lid, a core, and a base. The lid has a first terminal and a second terminal, and an inner surface with a first insulator. The core has a first surface bonded to the first insulator and a second surface bonded to a second insulator, and includes a pillar electrically connected to the second terminal. The base has an inner surface bonded to the second insulator and a portion being electrically connected to the pillar. The first terminal of the lid and the base are adapted for electrically connecting to an interior electrical unit positioned within the core so that there are conductive paths from the electrical unit to the first and second terminals. The lid can include a third terminal in electrical contact with a portion of the core, and the portion of the core can be adapted for electrically connecting to the electrical unit.

Terminals for multi-layer devices

A differential variable capacitance acceleration sensor includes a sandwich structure having three stacked plates of silicon with the center plate mounted such that its center portion is enabled to move in a sealed cavity with each side thereof moving toward and away from a fixed cooperating plate forming the opposite side of a capacitive circuit. The center portion or mass of the center plate is suspended from its rim by means of a large number of integral fingers extending from the rim to the top and bottom surfaces of the center portion. This center mass includes a number of through holes to permit the passage of air from one side to the other and may also include grooves to aid in the flow of air. The fixed top plate or lid and the base also have, or may have, grooves to assist in the passage of air. An alternative embodiment includes a smaller number of more compliant fingers to provide a more compliant structure. A number of spaced stops are provided in the lid and base to overcome electrostatic and pneumatic latch up. The method of forming the individual parts is also taught.

Growing community of inventors

Palo Alto, CA, United States of America

Leslie Bruce Wilner