Thomson-csf

Leonidas Karapiperis

Didier Pribat

Dominique Dieumegard

Guy Garry

Christian Collet

Louis Mercandalli

Bernard Dessertenne

Process for hardening active electronic components against ionizing

The invention pertains to the field of fabrication, by vapor phase deposition, of the thin layers of monocrystalline, polycrystalline or amorphous material on a substrate having an identical or different nature. The aim is to provide a method, enabling this structure to be made, that includes a modulation of both the composition and the doping, in a direction that is not perpendicular to the surface of the substrate, notably in a lateral way to obtain a planar technology. According to the invention, this thin layer is made by conformal epitaxy, using a crystalline seed in gas phase, between two confinement layers made of a distinct material in such a way that there can be neither nucleation nor deposition of semiconductive material on the surfaces of said confinement layers and wherein the variation of the gaseous mixture of said gas phase is controlled to obtain said modulation of the composition and/or of the doping of said thin film.

Method for the directed modulation of the composition or doping of

Method for the fabrication of field emission type sources, and

In a method for the fabrication of a layer of a monocrystalline semiconducting layer on a layer of insulating material, an epitaxial growth is achieved in a cavity closed by layers of dielectric material, using a seed of monocrystalline semiconducting material of a substrate. The growth takes place first of all, vertically, perpendicularly to the seed, and then horizontally in the plane of the cavity. This method thus enables a three-dimensional integration of semiconductor components.

Method for making an alternation of layers of monocrystalline

A method for making a layer of monocrystalline, semiconducting material on a layer of insulating material is disclosed. For this, epitaxial growth is achieved in a cavity closed by layers of dielectric materials, using seeds of monocrystalline, semiconducting material of a substrate. This method thus enables a 3D integration of semiconductor components.

Method for the fabrication of an alternation of layers of

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Bourg la Reine, France

Leonidas Karapiperis