Pilegrowth Tech S.r.l.

Voltasolar S.r.l.

Leonida Miglio

Maurizio Filippo Acciarri

Simona Olga Binetti

Maurilio Giuseppe Meschia

Raffaele Moneta

Stefano Marchionna

Maurilio Meschia

Hans Van Kanel

A method for manufacturing a semiconductor structure with reduced bowing for applications in the field of power electronics, photonics, optoelectronics, solar energy conversion and the like, which comprises: a step of providing at least a first layer of a first semiconductor material, said first layer comprising a substrate of said first semiconductor material, which extends along a first reference plane, and a plurality of first portions of said first semiconductor material, which are mutually spaced and extend in elevation from said substrate along axes perpendicular to said first reference plane, said first portions having ends in distal position with respect to said substrate; a step of providing at least a second layer of a second semiconductor material, said second layer comprising second portions of said second semiconductor material, each of which is joined to the ends of a plurality of said first portions, said second portions being mutually spaced and extending along a second reference plane parallel to said first reference plane; The first portions of the first layer are produced with an aspect ratio that depends on a dimension of said second portions, measured along said second reference plane. In a further aspect thereof, the invention relates to a semiconductor structure for applications in the field of power electronics, photonics, optoelectronics, solar energy conversion and the like.

Method for industrial manufacturing of a semiconductor structure with reduced bowing

Structures and methods for producing active layer stacks of lattice matched, lattice mismatched and thermally mismatched semiconductor materials, with low threading dislocation densities, no layer cracking and minimized wafer bowing, by using epitaxial growth onto elevated substrate regions in a mask-less process.

Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication

The plant is suitable to produce a semiconductor film () having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case () embedding a chamber () divided into one deposition zone () and one evaporation zone (), which are separated by a screen () interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (). To the deposition zone () a magnetron device () is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (&#x3b1;) of the cylindrical member that is in the deposition zone (). To the evaporation zone () a cell () for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone () houses a substrate () on which the film () is produced. The cylindrical member () is provided with heating means of a portion of the side surface thereof that is from time to time in the evaporation zone (), so that the elements of the groups 11 and 13 previously deposited on this surface evaporate and deposit on the substrate () together with the at least one element of the group 16 forming the film ().

Plant and method for producing a semiconductor film

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Como, Italy

Leonida Miglio