University of Central Florida Research Foundation Inc

Leonid Chernyak

Robert E Peale

Alfons Schulte

Christopher J Fredricksen

Jonathan Lee

An IR sensor device may include an IR image sensor having an array of IR sensing pixels, and a readout circuit coupled to the IR image sensor and configured to sense sequential images. The IR sensor device may include a controller coupled to the readout circuit and configured to cause the readout circuit to apply a voltage to the IR image sensor between sensing of the sequential images.

Radiation-defect mitigation in InAs/GaSb strained-layer superlattice infrared detectors and related methods

The subject of this invention are method and system for enhancing performance characteristics (quantum efficiency, photoresponse, and spectral range) in photon detectors and solar cells (both of which are referred to as photon devices). The photon detectors are p-n junctions and/or Schottky barrier diodes. The solar cells are p-n junctions. The method and system can include injecting electrons into a p-region of a photon detector or solar cell over a selected time period of up to approximately 1500 seconds to control and improve minority carrier transport, in particular a diffusion length. The injection of electrons can occur periodically over several days and can occur under a o forward bias of the p-n junction or Schottky barrier. Improvements in quantum efficiency can be between approximately 2 to approximately 5 fold. The performance output of the device can be automatically sensed with computer type logic circuits, to actively control in real time the electron injection and to maximize performance results.

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Orlando, FL, United States of America

Leonid Chernyak