Day4 Energy Inc.

Leonid B Rubin

George L Rubin

Alexander Osipov

Bram M Sadlik

Andreas Schneider

A method of forming a selective emitter in a photovoltaic (PV) crystalline silicon semiconductor wafer involves forming a mask on a front side surface of the wafer to create masked and unmasked areas on the front side surface. A first silicon oxide layer is electrochemically formed at the unmasked areas of the front side surface such that the silicon oxide layer extends into an emitter of the wafer at least as far as a dead zone therein. The mask is removed and the first silicon oxide layer is etched back until substantially all of the first silicon oxide layer is removed. A second silicon oxide layer is then electrochemically formed on the front side surface such that the second silicon oxide layer has sufficient thickness to passivate the front side surface.

Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process

An electrode for contacting an electrically conductive surface of a photovoltaic element includes an electrically insulating optically transparent film, an adhesive layer provided on a planar surface of the film, and a plurality of substantially parallel, electrically conductive wires embedded into the adhesive layer. The plurality of wires lies over the planar surface of the film. A part of the surfaces of the wires protrude from the adhesive layer. At least the part of the surfaces protruding from the adhesive layer are covered by a coating consisting of an alloy having a low melting point to solder the wires to the electrically conductive surface and to a first terminal bar. The adhesive layer has a thickness less than the thickness of the wires embedded therein.

Electrode for photovoltaic cells, photovoltaic cell and photovoltaic module

A solar cell apparatus and process for making and using same involving a semiconductor wafer having a front side surface and a metallized back side surface and a semiconductor p/n junction between the front side surface and the back side surface. At least one front side interruption is caused to extend along at least a portion of the front side surface and into the wafer to a depth sufficient to interrupt the semiconductor p/n junction to define a plurality of separate p/n junction sections within the wafer and to define separate front side surface portions associated with respective separate p/n junction sections. A back side interruption is caused to extend along a portion of the metallized back side surface, generally opposite the front side interruption, to define a plurality of separate metallized back side surface portions associated with respective p/n junction sections and in electrical contact with respective p/n junction sections.

High voltage solar cell and solar cell module

An electrode for contacting an electrically conductive surface of a photovoltaic element includes an electrically insulating optically transparent film, an adhesive layer provided on a planar surface of the film, and a plurality of substantially parallel, electrically conductive wires embedded into the adhesive layer. The plurality of wires lies over the planar surface of the film. A part of the surfaces of the wires protrude from the adhesive layer. At least the part of the surfaces protruding from the adhesive layer are covered by a coating consisting of an alloy having a low melting point to solder the wires to the electrically conductive surface and to a first terminal bar. The adhesive layer has a thickness less that a thickness of the wires embedded therein.

Growing community of inventors

Burnaby, Canada

Leonid B Rubin