Other

Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Dolgoshein, Boris Anatolievich

Leonid Anatolievich Filatov

Masahiro Teshima

Razmik Mirzoyan

Boris Anatolievich Dolgoshein

Sergey Nikolaevich Klemin

Elena Viktorovna Popova

Elena Viktorovna Osenny Bulvar 10-118 Popova

The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc. The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 10to 10cm &#x2212;and which consists of cells, each of which comprises a p&#x2212; type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 10to 10cmand which is grown on the substrate, a p&#x2212; type conductivity layer whose dope additive concentration ranges from 10to 10cmand a n+ type conductivity layer whose dope additive concentration ranges from 10to 10cm, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells. Said silicon photoelectric multiplier (variant 2) comprising a n&#x2212; type conductivity substrate to which a p++-type conductivity whose dope additive concentration ranges from 10-10cm&#x2212;is applied and consists of cells, wherein in each cell a polysilicon resistor is placed on a silicon oxide layer and separating elements are disposed between the cells.

Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier

Growing community of inventors

Moscow, Russia

Leonid Anatolievich Filatov