Applied Materials, Inc.

Leonel Arturo Zuniga

Semyon Sherstinsky

Joseph Yudovsky

Ling Chen

Arnold Kholodenko

Alfred W Mak

Calvin R Augason

Samuel C Wilson

Jun Zhao

Maitreyee Mahajani

Bryan Y Pu

Michael D Welch

Steve G Ghanayem

Hongching Shan

Umesh M Kelkar

Talex Sajoto

Paul F Smith

Nitin Khurana

Leonid Selyutin

Tai T Ngo

Kuang-Han Ke

Alan R Popiolkowski

Ted G Yoshidome

Michael Phillips

Rod Mosely

Alison Gilliam

Sue Zhang

The present invention generally provides a support member adapted to provide vacuum chucking. In one aspect, a support member having an upper surface having an outer, raised portion defining an inner, recessed portion is provided. The inner recessed portion is in fluid communication with a vacuum supply. The support member may include a plurality of raised support portions having one or more recessed portions adjacent thereto, the raised support portions having equal heights above the recessed portions. The transition between the raised portions and the recessed portions is gradual and the orifices formed by the holes extending through the upper surface of the substrate support are rounded to eliminate sharp edges and rapid changes in height at the upper surface.

Substrate support member

A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.

Substrate support member for a processing chamber

A gas delivery apparatus and method for directing a flow of gas to the edge of a substrate at an angle to the radial direction of the substrate is provided. The apparatus directs the gas from a gas opening, over a plurality of grooves that are angled relative to a radial line originating at a center of the gas delivery apparatus. Subsequently, the gas is flowed over a portion of the substrate to prevent reactive gases from depositing on selective portions of the substrate.

Heater for processing chamber

Apparatus for retaining a wafer having improved wafer and chuck edge protection, contains an protection ring that circumscribes a pedestal and is biased to be in constant contact with the backside of the wafer. A biasing element uniformly biases the protection ring into contact with the circumferential edge of the wafer. The protection ring has an annular plan form that circumscribes an electrostatic chuck for retaining the wafer in a stationery position. Vertical travel of the ring is restricted by a hard stop that is formed by a portion of a focus ring which overhangs the protection ring. After a wafer is placed upon the chuck and the chucking force enabled, the chucking force easily overcomes the bias force upon the protection ring and the wafer rests upon the chuck support surface. The protection ring contacts the backside of the wafer to ensure that pedestal and electrostatic chuck are not exposed to the plasma and, when a silicon protection ring is used, the effective area of the wafer is extended beyond the physical dimensions of the wafer to facilitate a more uniform plasma distribution over the wafer.

Apparatus for improving wafer and chuck edge protection

A semiconductor processing chamber includes a substrate support member on which the substrate is positioned during processing in the chamber. To align the substrate on the substrate support member, an alignment member extends about the perimeter of the substrate receiving portion of the support member. The alignment member includes an alignment face thereon, which urges a substrate into alignment with the substrate receiving face of the support member as the substrate is deposited on the support member. The alignment member may also include a recessed portion, which ensures the presence of a gap between the edge of the substrate and the support member when the substrate contacts the support member.

Apparatus for centering substrates on support members

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San Jose, CA, United States of America

Leonel Arturo Zuniga