Advanced Energy Industries, Inc.

Monsanto Company

Diamonex, Incorporated

Kla Tencor Corporation

Veeco Instruments Inc.

Morgan Chemical Products, Inc.

Advanced Plasma, Inc.

Morgan Advanced Ceramics Limited

Leonard Joseph Mahoney

Rudolph Hugo Petrmichl

Gregory A Roche

Daniel Carter

David Ward Brown

Hendrik Walde

Carl William Almgren

William D Sproul

Steven J Roberts

William W Saylor

Fred M Kimock

Bradley J Knapp

David Matthew Burtner

Brian Kenneth Daniels

Norman Donald Galvin

Dennis John Hansen

Ray Hays Venable

James David Deakins

Edward George Thear

Tolga Erguder

Florian Joseph Fodor

Ray Hays Venable Iii

A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

Sensor array for measuring plasma characteristics in plasma processing environments

An ion source, often used for materials processing applications in a vacuum processing chamber, is provided with an adaptive control system. The adaptive control system has a microprocessor and memory that regulate the inputs of power and gas flow into the ion source. The adaptive control system monitors and stores the dynamic input impedance properties and status of input devices to the ion source. The adaptive control system may additionally control magnetic fields within the ion source. The adaptive control system provides a multivariable control for driving any combination of input power, gas flow, magnetic field, or electrostatic ion beam extraction or acceleration field into the ion source.

Adaptive controller for ion source

There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.

Wafer probe for measuring plasma and surface characteristics in plasma processing environments

A unique Hall-Current ion source apparatus is used for direct ion beam deposition of DLC coatings with hardness values greater than 10 GPa and at deposition rates greater than 10 &angst; per second. This ion source has a unique fluid-cooled anode with a shadowed gap through which ion sources feed gases are introduced while depositing gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. A method is described in which a substrate is disposed within a vacuum chamber, coated with a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively. The method is particularly advantageous for producing thin, hard, wear resistant DLC and Si-DLC coatings for magnetic transducers and media used for magnetic data storage applications.

Method and apparatus for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source

There is provided by this invention a novel inductively coupled plasma source apparatus that utilizes a transformer to induce closed path secondary plasma currents in a hollow metal housing that is directly cooled by a fluid. This plasma source apparatus is particularly useful for generating a high charged particle density source of ions, electrons, and chemically active species to serve various plasma related processes that may require high power densities. A hollow metal vacuum chamber is coupled to and electrically insulated from a metal vacuum process chamber by means of dielectric gaps that are well shielded from direct exposure to the plasma body. Electrons, photons and excited gaseous species are generated within the metal hollow chamber and process chamber to serve a wide variety of material, surface and gas processing applications. There is also provided by this invention a means of ganging together several hollow metal vacuum chamber assemblies about a single vacuum process chamber.

Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof

A method is provided for manufacturing a diamond-like carbon (DLC) coated optical phase-change recording medium for use with near-field optical head devices and which exhibits superior wear resistance and improved lifetime. According to the method, the surface of a composite optical phase-change media structure deposited onto a substrate is subjected to ion beam deposition of a DLC over-coat to a thickness of no greater than about 450 .ANG.. Preferably the DLC is ion beam deposited onto the phase-change recording layer at the surface of the medium structure or onto a germanium-containing adhesion-promoting interlayer to achieve the desired adhesion of the DLC to the surface of the medium structure.

Diamond-like carbon over-coats for optical recording media devices and

A unique Hall-Current ion source apparatus is used for direct ion beam deposition of DLC coatings with hardness values greater than 10 GPa and at deposition rates greater than 10 .ANG. per second. This ion source has a unique fluid-cooled anode with a shadowed gap through which ion sources feed gases are introduced while depositing gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. A method is described in which a substrate is disposed within a vacuum chamber, coated with a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively. The method is particularly advantageous for producing thin, hard, wear resistant DLC and Si-DLC coatings for magnetic transducers and media used for magnetic data storage applications.

Method for deposition of diamond-like carbon and silicon-doped

Plasma beam apparatus and method for the purpose of vacuum processing temperature sensitive materials at high discharge power and high processing rates. A gridless, closed or non-closed Hall-Current ion source is described which features a unique fluid-cooled anode with a shadowed gap through which ion source feed gases are introduced while depositing feed gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. Thin vacuum gaps are also used between anode and non-anode components in order to preserve electrical isolation of the anode when depositing conductive coatings. The magnetic field of the Hall-Current ion source is produced by an electromagnet driven either by the discharge current or a periodically alternating current.

Gridless ion source for the vacuum processing of materials

An ion beam deposition method is provided for manufacturing a coated substrate with improved wear-resistance, and improved lifetime. The substrate is first chemically cleaned to remove contaminants. Secondly, the substrate is inserted into a vacuum chamber onto a substrate holder, and the air therein is evacuated via pump. Then the substrate surface is bombarded with energetic ions from an ion beam source supplied from inert or reactive gas inlets to assist in removing residual hydrocarbons and surface oxides, and activating the surface. After sputter-etching the surface, a protective, wear-resistant coating is deposited by plasma ion beam deposition where a portion of the precursor gases are introduced into the ion beam downstream of the ion source, and hydrogen is introduced directly into the ion source plasma chamber. The plasma ion beam-deposited coating may contain one or more layers. Once the chosen coating thickness is achieved, deposition is terminated, vacuum chamber pressure is increased to atmospheric and the coated substrate products having wear-resistance greater than glass are removed from the chamber. These coated products may be ceramics, architectural glass, analytical instrument windows, automotive windshields, and laser bar code scanners for use in retail stores and supermarkets.

Ion beam process for deposition of highly wear-resistant optical coatings

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Fort Collins, CO, United States of America

Leonard Joseph Mahoney