Asml Netherlands B.v.

Leon Paul Van Dijk

Richard Johannes Franciscus Van Haren

Xing Lan Liu

Victor Emanuel Calado

Ronald Henricus Johannes Otten

Ilya Malakhovsky

Orion Jonathan Pierre Mouraille

Alexander Ypma

Reiner Maria Jungblut

Oktay Yildirim

Arie Jeffrey Den Boef

Maurits Van Der Schaar

Patricius Aloysius Jacobus Tinnemans

Everhardus Cornelis Mos

Wim Tjibbo Tel

Stefan Hunsche

Franciscus Godefridus Casper Bijnen

Hakki Ergün Cekli

Marinus Jochemsen

Roy Werkman

Jochem Sebastiaan Wildenberg

Edo Maria Hulsebos

Irina Lyulina

Willem Seine Christian Roelofs

Erik Jensen

Loek Johannes Petrus Verhees

Amandev Singh

Masashi Ishibashi

Bijoy Rajasekharan

Adam Jan Urbanczyk

Hakki Ergun Cekli

Cedric Marc Affentauschegg

Maialen Larranaga

Faegheh Hasibi

Subodh Singh

Anne Marie Pastol

Mahdi Sadeghinia

A method for predicting a property associated with a product unit. The method may include: obtaining a plurality of data sets, wherein each of the plurality of data sets includes data associated with a spatial distribution of a parameter across the product unit; representing each of the plurality of data sets as a multidimensional object; obtaining a convolutional neural network model trained with previously obtained multidimensional objects and properties of previous product units; and applying the convolutional neural network model to the plurality of multidimensional objects representing the plurality of data sets, to predict the property associated with the product unit.

Apparatus and method for property joint interpolation and prediction

A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.

Method for adjusting a target feature in a model of a patterning process based on local electric fields

A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process is described. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.

A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.

Determining an optimal operational parameter setting of a metrology system

A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

Method to change an etch parameter

A method and control system for determining stress in a substrate. The method includes determining a measured position difference between a measured position of at least one first feature and a measured position of at least one second feature which have been applied on a substrate, and determining local stress in the substrate from the measured position difference.

Methods of determining stress in a substrate, control system for controlling a lithographic process, lithographic apparatus and computer program product

Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.

Metrology apparatus

Methods and apparatuses for determining a position of an alignment mark applied to a region of a first layer on a substrate using a lithographic process by: obtaining an expected position of the alignment mark; obtaining a geometrical deformation of the region due to a control action correcting the lithographic process; obtaining a translation of the alignment mark due to the geometrical deformation; and determining the position of the alignment mark based on the expected position and the translation.

Alignment mark positioning in a lithographic process

Methods and associated apparatus for reconstructing a free-form geometry of a substrate, the method including: positioning the substrate on a substrate holder configured to retain the substrate under a retaining force that deforms the substrate from its free-form geometry; measuring a height map of the deformed substrate; and reconstructing the free-form geometry of the deformed substrate based on an expected deformation of the substrate by the retaining force and the measured height map.

Methods and apparatus for use in a device manufacturing method

A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.

Focus and overlay improvement by modifying a patterning device

A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.

Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product

A method of characterizing a deformation of a plurality of substrates is described. The method includes: measuring, for a plurality of n different alignment measurement parameters &#x3bb; and for a plurality of substrates, a position of the alignment marks; determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; grouping the positional deviations into data sets; determining an average data set; subtracting the average data set from the data sets to obtain a plurality of variable data sets; performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; and subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.

Lithographic apparatus and device manufacturing method

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Eindhoven, Netherlands

Leon Paul Van Dijk